Degussa Aktiengesellschaft

Leybold Aktiengesellschaft

Heraeus Deutschland Gmbh & Co Kg

W.c. Heraeus Gmbh & Co Kg

Materion Advanced Materials Germany Gmbh

Leybold Materials Gmbh

Uwe Konietzka

Martin Weigert

Martin Schlott

Bruce Gehman

Martin Kutzner

Christoph Simons

Markus Schultheis

Uwe Kopacz

Christoph Daube

Sabine Schneider-Betz

Jens Wagner

Andreas Rack

Horst Becker

Shawn Vahlstrom

Albert Kastner

Andreas Herzog

Ben Kahle

Lars Ebel

Thomas Scholl

The present invention relates to a sputtering target, comprising a silver alloy comprising

Silver alloy-based sputter target

Planar or tubular sputtering targets made of a silver base alloy and at least one further alloy component selected from indium, tin, antimony, and bismuth accounting jointly for a weight fraction of 0.01 to 5.0% by weight are known. However, moving on to ever larger targets, spark discharges are evident and often lead to losses especially in the production of large and high-resolution displays having comparatively small pixels. For producing a sputtering target with a large surface area on the basis of a silver alloy of this type, which has a surface area of more than 0.3 mas a planar sputtering target and has a length of at least 1.0 m as a tubular sputtering target, and in which the danger of spark discharges is reduced and thus a sputtering process with comparatively high power density is made feasible, the invention proposes that the silver base alloy has a crystalline structure with a mean grain size of less than 120 &#x3bc;m, an oxygen content of less than 50 wt.-ppm, a content of the impurity elements, aluminum, lithium, sodium, calcium, magnesium, barium, and chromium, each of less than 0.5 wt.-ppm, and a metallic purity of at least 99.99% by weight.

Planar or tubular sputtering target and method for the production thereof

The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si N or SiO in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.

Sputtering target for depositing silicon layers in their nitride or oxide form and a process for its preparation

A target for production of transparent electrically conductive layers by cathode sputtering is produced from indium oxide-tin oxide powder mixtures or coprecipitated indium oxide-tin oxide powders. A target with especially high mechanical strength consists of an oxide ceramic material into which metallic phase components have been incorporated in a uniform and finely distributed manner and which has a density of more than 96% of the theoretical density of indium oxide/tin oxide consisting purely of oxide.

Sputter target for cathodic atomization to produce transparent,

Oxide-ceramic targets of partially reduced indium oxide-tin oxide mixtures are described. The targets provide high sputter performances, and they exhibit an essentially defined degree of reduction between 0.02 and 0.3, a density between 75 and 98% of the theoretical density and a specific electric resistance between 89.times.10.sup.-3 and 0.25.times.10.sup.-3 .OMEGA. cm. The degree of reduction must not deviate at any point on the target surface by more than 5% from the average degree of reduction of the target. The targets are produced by means of hot-pressing the oxide mixtures which were partially reduced beforehand in a special method step.

Target for cathode sputtering and method of its production

The invention concerns a process for coating a substrate 1 of little or no corrosion resistance, especially a metal substrate having an alloy consisting at least of Ni, Cr and Fe, in an evacuable coating chamber 15, 15a. It comprises making an electrode that can be connected to a current supply 10, this electrode being electrically connected to a target 3 which is sputtered and the sputtered particles of which are deposited on the substrate 1. Reactive process gases are, for this purpose, supplied to the coating chamber 15, 15a, so that an amorphously depositing layer 2 is applied onto the substrate.

Method for coating a substrate of low resistance to corrosion

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Geiselbach, Germany

Uwe Konietzka