Applied Materials Israel Limited

Uri Hadar

Dror Shemesh

Doron Girmonsky

Michal Eilon

Dror Alumot

Gilad Vered

Elran Gamzo

A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective depth; and (ii) measuring the emitted light to obtain an optical emission data set of the sample. The data analysis operation includes obtaining from the measured optical emission data sets a concentration map quantifying a dependence of a concentration of a material, which the sample comprises, on at least the depth.

Z-profiling of wafers based on X-ray measurements

There is provided a system and method of examining a specimen comprising a first layer and a second layer. The method comprises obtaining a recipe including a template image for each reference polygon in a reference image and a template mask indicative of proximity of a set of locations in the template image to an edge of the reference polygon; obtaining an inspection image in runtime; identifying first inspection polygons in the inspection image corresponding to the first reference polygons using template images and template masks thereof; determining a first shift for the first layer based on the first locations, and registering the first reference polygons with the inspection image based on the first shift. Similarly, a second shift for the second layer can be determined, and the second reference polygons can be registered with the inspection image based on the second shift.

Shape localization for examining a semiconductor specimen

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Tel Aviv, Israel

Uri Hadar