Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Other

Unryu Ogawa

Tadashi Terasaki

Akito Hirano

Tatsushi Ueda

Shinji Yashima

Tokunobu Akao

Atsushi Umekawa

Masahisa Okuno

Kaichiro Minami

Takayuki Sato

Takashi Ozaki

Yuji Takebayashi

Masanori Nakayama

Seiyo Nakashima

Masanori Okuno

Tomoyuki Yamada

Yukito Nakagawa

Masakazu Sakata

Noriyoshi Sato

Toshihiko Yonejima

Kenji Kanayama

Toshiki Fujino

Takeshi Kasai

Satoru Iizuka

Masayuki Yamada

Yoshio Tominaga

Katsuaki Nogami

Hiroyasu Sato

Hiroki Okamiya

Tsukasa Yoneyama

Naoko Tsunoda

Yukihito Hada

Naoya Yamakado

Yoichiro Numazawa

Described herein is a technique capable of suppressing or preventing an inside of a source gas nozzle from being heated to a substrate processing temperature when a source gas is supplied through the source gas nozzle into a reaction tube in which a substrate is accommodated. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube made of a first material and capable of accommodating a substrate; and a source gas nozzle provided in the reaction tube and at least a part thereof made of a second material whose reflectance is higher than that of the first material and whose surface is rougher than that of the first material by bubbles contained therein, wherein a source gas is supplied through the source gas nozzle.

Substrate processing apparatus, gas nozzle and method of manufacturing semiconductor device

A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.

Substrate processing method and substrate processing apparatus

A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.

Substrate processing apparatus, exhaust system and method of manufacturing semiconductor device

A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit.

Substrate processing apparatus having rotatable slot-type antenna and method of manufacturing semiconductor device using the same

A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of &#xbc; wavelength of the microwave supplied when the substrate is processed.

Substrate processing apparatus and method of manufacturing a semiconductor device

A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.

A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

Producing method of semiconductor device

A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.

Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride

The invention provides a plasma processing apparatus, in which the uniformity of the plasma density can be improved, and the electron temperature can be kept low. A vacuum vessel for generating a plasma includes an upper vessel that is dome-shaped and formed in one seamless piece, and a lower vessel fastened tightly on a lower aperture portion of the upper vessel with a sealing member. The plasma processing apparatus is provided with a supply port for supplying gas to the vacuum vessel and an exhaust port for exhausting gas. An electrode for applying high-frequency power to ionize the gas is provided not in the vacuum vessel but in ring-shape outside the vacuum vessel . On the outer side of this tubular electrode , a pair of tubular magnets are provided, which form magnetic force lines that intersect perpendicularly with the electric field.

Plasma processing apparatus

A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power. Due to this, processing of a large area substrate becomes possible.

Growing community of inventors

Toyama, Japan

Unryu Ogawa