K. C. Tech Co., Ltd.

Iucf-hyu

Industry-university Cooperation Foundation Hanyang University

Sumco Corporation

Hanyang Hak Won Co., Ltd.

Un Gyu Paik

Jea Gun Park

Yong Kim

Hyun Ku Park

Dae Hyeong Kim

Seok Min Hong

Jae Hyun Jeon

Jae Gun Park

Seung Woo Lee

Sang Kyun Kim

Takeo Katoh

Ho Saeng Kim

Won Mo Lee

Ye Hwan Kim

Ho Seong Kim

Dae Hyung Kim

Tae Seup Song

Myoung Won Suh

Se Ho Sun

Dong Soo Lee

Sung Jun Kim

Hyun Goo Kang

The present invention relates to an anode active material including a composite of lithium titanium oxide (LTO), a silicon-containing material and crystalline carbon, a method for manufacturing the same, and a lithium secondary battery including the same. The composite according to the present invention satisfies high capacity, high energy density and high lifespan stability, improves fast charging characteristics, and also improves mechanical strength, so a lithium secondary battery using the composite as an anode active material can be usefully used for a next-generation electric vehicle, energy storage systems, etc.

Anode active material, method for manufacturing same, and lithium secondary battery comprising same

A CMP slurry is provided comprising polishing particles, the polishing particle comprising organically modified colloidal silica. Also, a method of preparing a CMP slurry is provided, comprising the steps of: preparing polishing particles comprising organically modified silica; converting the polishing particles into an aqueous state; and adding pure water, a hydrophilic additive and a dispersing agent to the polishing particles. The polishing particles can be synthesized using a sol-gel process. According to the invention, a slurry having excellent polishing properties can be prepared, in which the surface properties of colloidal silica are changed to control the physical properties of the polishing particles and which can ensure a desired CMP removal rate while minimizing the occurrence of scratches.

CMP slurry, preparation method thereof and method of polishing substrate using the same

A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of the present invention is aimed at compensating the nanotopography effect during chemical mechanical polishing process of the oxide layer formed on the surface of the wafer, and contains abrasive particles and an additive, wherein the size of the abrasive particles and the concentration of the additive are controlled within predetermined ranges in order to control the deviation of thickness (OTD) of the oxide layer below a certain level after the chemical mechanical polishing process.

Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same

Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

Polishing slurry, method of producing same, and method of polishing substrate

Disclosed herein is a polishing slurry and a method of producing the same. The polishing slurry has high selectivity in terms of a polishing speed of an oxide layer to that of a nitride layer used in CMP of an STI process which is essential to produce ultra highly integrated semiconductors having a design rule of 256 mega D-RAM or more, for example, a design rule of 0.13 &#x3bc;m or less. A method and a device for pre-treating polishing particles, a dispersing device and a method of operating the dispersing device, a method of adding a chemical additive and an amount added, and a device for transferring samples are properly employed to produce a high performance nano ceria slurry essential to CMP for a process of producing ultra highly integrated semiconductors of 0.13 &#x3bc;m or less, particularly, the STI process.

Slurry for CMP and method of polishing substrate using same

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Seoul, South Korea

Un Gyu Paik