Kla Tencor Corporation

Kla Corporation

Other

Vistec Semiconductor Systems Gmbh

Pohlmann, Ulrich

Ulrich Pohlmann

Nadav Gutman

Stefan Eyring

Inna Steely-Tarshish

Mark Ghinovker

Raviv Yohanan

Eitan Hajaj

Ira Naot

Yoel Feler

Frank Laske

Chris Steely

Yoram Uziel

Eran Amit

Aviv Balan

Joseph Walsh

Francis Chilese

Hari Pathangi

Gert Weniger

Ariel Hildesheim

Henning Stoschus

Detlef Wolter

Thomas Heidrich

Frank Rennicke

Yoel Feier

Francis Charles Chilese

Joseph Fleming Walsh

Electron beam overlay targets and method of performing overlay measurements on a target using a semiconductor metrology tool are provided. One target includes a plurality of electron beam overlay elements and a plurality of two-dimensional elements that provide at least one two-dimensional imaging. The plurality of two dimensional elements are an array of evenly-spaced polygonal gratings across at least three rows and at least three columns. Another target includes a plurality of electron beam overlay elements and a plurality of AIMid elements. Each of the electron beam overlay elements includes at least two gratings that are overlaid at a perpendicular orientation to each other. The plurality of AIMid elements includes at least two gratings that are overlaid at a perpendicular orientation to each other.

Overlay mark design for electron beam overlay

The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

Overlay design for electron beam and scatterometry overlay measurements

A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

Multi-stage, multi-zone substrate positioning systems

A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.

Performance optimized scanning sequence for eBeam metrology and inspection

An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals

An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.

Systems and methods for device-correlated overlay metrology

Systems and methods to control particle generation in a reticle inspection system are presented. The number of particles added to a reticle during an entire load-inspect-unload sequence of a reticle inspection system is reduced by performing all reticle contact events in a controlled, flowing air environment. In one embodiment, the reticle is fixed to a carrier by clamping outside of the vacuum environment, and the carrier, rather than the reticle, is coupled to the reticle stage of the inspection system. In this manner, the high levels of back-side particulation associated with electrostatic chucking are avoided. In addition, the carrier is configured to be coupled to the reticle stage in any of four different orientations separated by ninety degrees.

Apparatus and methods for reticle handling in an EUV reticle inspection tool

The invention relates to an apparatus for the determination of the position of a disc-shaped object, particularly of a wafer (). Thereby, a mount () for supporting the sensor device () is provided on a movable carrier ().

Apparatus and method for the determination of the position of a disk-shaped object

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Jena, Germany

Ulrich Pohlmann