U.S. Philips Corporation

Solvay Deutschland Gmbh

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Udo Bringmann

Detlef G Schon

Claus-Peter Klages

Olaf H Dossel

Guenther Doellein

Guenter Weidenbach

Reiner U Orlowski

Bernd Szyszka

Klaus Drews

Hans Meyer

Klaus W Gerstenberg

Niels Malkomes

Andreas Weber

Lothar Schafer

Rolf Six

Gerhard Kursten

Ralf Pöckelmann

A process for depositing a layer containing boron and nitrogen on a substrate by decomposing one or more N-substituted borazoles in the presence of the substrate, in particular by a plasma CVD process.

Process for depositing a layer containing boron and nitrogen

Method of depositing micro-crystalline solid particles from a vapor phase containing a carbonaceous gas using chemical vapor deposition (CVD), in which the solid particles to be deposited are deposited at a pressure in the range from 10.sup.-5 to 1 bar onto a substrate which has been heated to a temperature in the range from 450.degree. to 1200.degree. C. and in which the chemical vapor phase reactions are effected in the gas phase which is thermally energized by means of a resistance heat conductor, a resistance heat conductor made of a carbide of at least one transition metal from the secondary group IVa to VIa of the periodic element system (PSE) with a carbon content which substantially corresponds to a stoichiometrical composition of the carbide and having a melting point of &gt;2000.degree. C. being used.

Method of depositing micro-crystalline solid particles by hot filament

Thin film strain gauge system consisting of an elastically deformable flexible metallic substrate on which an electrically insulating layer of a plasma-polymerized material, in particular of Si:N:O:C:H-containing compounds and thereon a structured resistance layer as well as an electrically readily conducting layer having a structure for the electrical contacting are provided.

Thin-film strain gauge system and method of manufacturing same

A device for covering a substrate by means of both plasma chemical vapor deposition and by high-frequency cathode sputtering which, as a result of easily exchangeable individual devices to introduce gaseous substances into the reaction space as well as easily exchangeable individual devices for influencing the flow of the process gases within the reaction space, results in a very good uniformity of the layer thickness of the produced layers even when the operation has to be carried out at higher gas pressures and hence higher flow rates.

Device for coating a substrate by means of plasma-CVD or cathode

Growing community of inventors

Halstenbek, Germany

Udo Bringmann