Visera Technologies Company Limited

Taiwan Semiconductor Manufacturing Comp. Ltd.

Omnivision Technologies, Inc.

Semileds Optoelectronics Co., Ltd.

Tzu-Han Lin

Pai-Chun Peter Zung

Jui-Ping Weng

Tzy-Ying Lin

Hsiao-Wen Lee

Jang-Cheng Hsieh

Li-Hsin Tseng

Shin-Chang Shiung

Chien-Pang Lin

Wu-Cheng Kuo

Chia-Yang Chang

Chun-Yen Lo

Chieh-Yuan Cheng

Chia-Jen Cheng

Kai-Chih Wang

Fang-Chang Liu

Wei-Hung Kang

Boe Su

Kuo-Ching Chang

Peter Zung

Wei-Ko Wang

Teng-Sheng Chen

Kuo-Jung Fu

Chun-Chi Lin

Simon W Lu

Huei-Mei Yu

Jui-Peng Weng

Hui-Mei Yu

Ching-Chiang Wu

Li-Chuan Huang

An image sensor package and method for fabricating the same is provided. The image sensor package includes a first substrate comprising a via hole therein, a driving circuit and a first conductive pad thereon. A second substrate comprising a photosensitive device and a second conductive pad thereon is bonded to the first substrate, so that the driving circuit, formed on the first substrate, can electrically connect to and further control the photosensitive device, formed on the second substrate. A solder ball is formed on a backside of the first substrate and electrically connects to the via hole for transmitting a signal from the driving circuit. Because the photosensitive device and the driving circuit are fabricated individually on the different substrates, fabrication and design thereof is more flexible. Moreover, the image sensor package is relatively less thick, thus, the dimensions thereof are reduced.

Method for fabricating an image sensor package

An image sensor package and method for fabricating the same is provided. The image sensor package includes a first substrate comprising a via therein, a driving circuit and a first conductive pad thereon. A second substrate comprising a photosensitive device and a second conductive pad thereon is bonded to the first substrate, so that the driving circuit, formed on the first substrate, can electrically connect to and further control the photosensitive device, formed on the second substrate. A solder ball is formed on a backside of the first substrate and electrically connects to the via for transmitting a signal from the driving circuit. Because the photosensitive device and the driving circuit are fabricated individually on the different substrates, fabrication and design thereof is more flexible. Moreover, the image sensor package is relatively less thick, thus, the dimensions thereof are reduced.

Image sensor package

A wafer level image module includes a photo sensor for outputting an electrical signal upon receiving light, a lens set for focusing incident light onto the photo sensor, and an adjustment member disposed between the photo sensor and the lens set for controlling the distance between the photo sensor and the lens set to compensate the focus offset of the photo sensor for enabling the lens set to accurately focus the incident light onto the photo sensor in an in-focus manner so as to provide a high image quality.

Method for making wafer level image module

A light-emitting diode package is provided. The light-emitting diode package comprises a substrate and a first metal layer disposed over the substrate. A solder layer is disposed on the first metal layer and a light-emitting diode chip is disposed on the solder layer, wherein the light-emitting diode chip comprises a conductive substrate and a multilayered epitaxial structure formed on the conductive substrate, and wherein the conductive substrate is adjacent to the solder layer.

Light-emitting diode package

A chip package and a fabrication method thereof are provided. The chip package includes a substrate and a chip disposed over the substrate. A solder layer is disposed between the chip and the substrate. A conductive pad is disposed between the solder layer and the substrate, wherein the conductive pad includes a first portion disposed under the solder layer, a second portion disposed away from the first portion and a connective portion disposed between the first portion and the second portion. The connective portion has a width which is narrower than a width of the first portion along a first direction perpendicular to a second direction extending from the first portion to the connective portion.

Chip package and fabricating method thereof

Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device comprises a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.

Image sensing devices and methods for fabricating the same

An electronic assembly for an image sensor device is disclosed. The electronic assembly comprises a package module and a lens set mounted thereon. The package module comprises a device substrate comprising at least one grounding plug therein, in which the grounding plug is insulated from the device substrate and an array of optoelectronic devices therein. A transparent substrate comprises a dam portion attached to the device substrate to form a cavity between the device and transparent substrates. A micro-lens array is disposed within the cavity. A conductive layer is electrically connected to the grounding plug and covers the sidewalls of the lens set and the package module and the upper surface of the lens set. A method for fabricating the electronic assembly is also disclosed.

Electronic assembly for image sensor device

A white-light LED chip and a fabrication method thereof are provided. The white-light LED chip comprises a blue-light LED chip and a phosphor layer directly disposed on a top surface of the blue-light LED chip. The method comprises providing a plurality of blue-light LED chips attached to a substrate, wherein at least one contact pad is formed on the top surface of each blue-light LED chip. A protective layer is formed on the contact pad. A phosphor layer is formed on the top surface of the blue-light LED chip by a molding process, exposing the contact pad. Finally, the protective layer and the substrate are removed from the blue-light LED chip to form a white-light LED chip.

White-light light emitting diode chips and fabrication methods thereof

Electronic device packages with electromagnetic compatibility (EMC) coating thereon are presented. An electronic device package includes a chip scale package having a CMOS image sensor (CIS) array chip and a set of lenses configured with an aperture. An encapsulation is molded overlying the chip scale package. A shield is atop the encapsulation. A frame fixes the set of lenses to the encapsulation. An electromagnetic compatibility (EMC) coating is formed on the encapsulation to prevent electromagnetic interference.

Electronic device package with electromagnetic compatibility (EMC) coating thereon

A semiconductor device is disclosed. The semiconductor device comprises a light-emitting diode chip disposed in a cavity of a semiconductor substrate. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the cavity, in which the lens module comprises a molded lens and a transparent conductive layer coated with a fluorescent material under the molded lens. A method for fabricating the semiconductor devices is also disclosed.

Light-emitting diode device and method for fabricating the same

A light-emitting diode (LED) device is disclosed. The LED device includes a semiconductor substrate with a planar top surface, a light-emitting diode (LED) chip disposed over the top surface of the semiconductor substrate, at least two isolated outer wiring layers formed through the semiconductor substrate and electrically connected to the light-emitting diode chip, serving as input terminals, a transparent encapsulating layer with a substantially planar top surface formed over the semiconductor substrate, capping the LED chip and the at least two isolated outer wiring layers, and a lens module adhered to the substantially planar top surface of the transparent encapsulating layer to cap the light-emitting diode chip. In one embodiment, the lens module includes a fluorescent layer and a lens covering or covered by the fluorescent layer.

A semiconductor device is disclosed. The semiconductor device comprises a light-emitting diode chip disposed in a cavity of a semiconductor substrate. At least two isolated outer wiring layers are disposed on the bottom surface of the semiconductor substrate and are electrically connected to the light-emitting diode chip, serving as input terminals. A lens module is adhered to the top surface of the semiconductor substrate to cap the cavity, in which the lens module comprises a molded lens and a molded fluorescent layer thereunder and the molded fluorescent layer faces the light-emitting diode chip. A method for fabricating the semiconductor devices is also disclosed.

The invention provides an image sensor package and method for fabricating the same. The image sensor package comprises a first substrate comprising a sensor device thereon and a hole therein. A bonding pad comprising a first opening is formed on an upper surface of the first substrate. A second substrate comprising a spacer element with a second opening therein is disposed on the first substrate. A conductive plug is formed in the hole and passes through the first and second openings to the second substrate to electrically contact with the bonding pad. A conductive layer is formed on a lower surface of the first substrate and electrically connects to the conductive plug. A solder ball is formed on the conductive layer and electrically connects to the bonding pad by the conductive plug. The image sensor package further comprises a second substrate bonding to the first substrate. The image sensor package is relatively less thick, thus, the dimensions thereof are relatively reduced.

Image sensor package and fabrication method thereof

An optoelectronic device chip, and a method for making the chip, are disclosed. The chip comprises a device substrate, an optically transparent upper substrate, and a composite spacer layer which includes an adhesive material and a plurality of particles dispersed in said adhesive material. The distance between the device substrate and the upper substrate is controlled by the thickness of the composite spacer layer so that the variation is within the depth of focus of optical system.

Optoelectronic device chip having a composite spacer structure and method making same

Isolation structure for CMOS image sensor device chip scale packages and fabrication methods thereof. A CMOS image sensor chip scale package includes a transparent substrate configured as a support structure for the package. The transparent substrate includes a first cutting edge and a second cutting edge. A CMOS image sensor die with a die circuitry is mounted on the transparent substrate. An encapsulant is disposed on the substrate encapsulating the CMOS image sensor die. A connection extends from the die circuitry to a plurality of terminal contacts for the package on the encapsulant, wherein the connection is exposed by the first cutting edge. An isolation structure is disposed on the first cutting edge passivating the exposed connection and co-planed with the second cutting edge.

Growing community of inventors

Hsinchu, Taiwan

Tzu-Han Lin