Taiwan Semiconductor Manufacturing Comp. Ltd.

National Sun-yat-sen University

Tai-saw Technology Co., Ltd.

Tzu-Chun Tang

Chuei-Tang Wang

Chen-Hua Douglas Yu

Chung-Hao Tsai

Chieh-Yen Chen

Kai-Chiang Wu

Chun-Lin Lu

Vincent Chen

Che-Wei Hsu

Wei-Ting Chen

Hung-Yi Kuo

Ming Hung Tseng

Hao-Yi Tsai

Ching-Hua Hsieh

Shou Zen Chang

Han-Ping Pu

Chao-Wen Shih

Shou-Zen Chang

Yen-Ping Wang

Wei-Ting Lin

Ming-Kai Liu

Ching-Feng Yang

Pei-Hsuan Lee

Chien-Ling Hwang

Albert Wan

Yu-Ting Chiu

Jui-Chang Kuo

Ken-Huang Lin

In-Tsang Lin

Wei-Yu Chen

Hsiu-Jen Lin

Ming-Che Ho

Yu-Peng Tsai

Tzyy-Sheng Horng

Hsuan-Ting Kuo

Chih-Chiang Tsao

Chia-Shen Cheng

Chia-Lun Chang

Cheng-Shiuan Wong

Tuan-Yu Hung

Chia-Chia Lin

An integrated fan-out (InFO) package includes a die, an encapsulant, and a horn antenna. The die has an active surface and a rear surface opposite to the active surface. The encapsulant laterally encapsulates the die. The horn antenna is electrically connected to the die. The horn antenna includes a top wall and a bottom wall respectively located on two opposite sides of the die and the encapsulant. A portion of the top wall is located within a span of the active surface of the die. A portion of the bottom wall is located within a span of the rear surface of the die.

Integrated fan-out package

An electronic apparatus is provided. The electronic apparatus includes an integrated fan-out package, a dielectric housing, and a plurality of conductive patterns. The dielectric housing is covering the integrated fan-out package, wherein a gap or a first dielectric layer is in between the dielectric housing and the integrated fan-out package. The plurality of conductive patterns is located on a surface of the dielectric housing, wherein the plurality of conductive patterns is located in between the dielectric housing and the integrated fan-out package.

Electronic apparatus including antennas and directors

A package structure includes a semiconductor die, an antenna substrate structure, a redistribution layer. The semiconductor die laterally encapsulated by a first encapsulant. The antenna substrate structure disposed over the semiconductor die, wherein the antenna substrate structure includes a first type of antenna, and a second type of antenna disposed on a side of the antenna substrate structure facing away from the semiconductor die. The redistribution layer disposed between the semiconductor die and the antenna substrate structure. The semiconductor die, the first type of antenna, and the second type of antenna are electrically coupled through the redistribution layer. The polarization of radiation emitted by the first type of antenna is perpendicular to a polarization of radiation emitted by the second type of antenna.

Package structure and manufacturing method thereof

A package structure and a manufacturing method thereof are provided. The package structure includes a carrier substrate, an integrated circuit (IC) die thermally coupled to the carrier substrate through a thermally conductive layer, an antenna pattern disposed over the carrier substrate and the IC die, a redistribution structure disposed between the antenna pattern and the IC die, and an underfill disposed below and thermally coupled to the carrier substrate. The antenna pattern is electrically coupled to the IC die.

Package structure comprising thermally conductive layer around the IC die

An integrated fan-out (InFO) package includes a die, an encapsulant, a redistribution structure, a slot antenna, an insulating layer, a plurality of conductive structures, and an antenna confinement structure. The encapsulant laterally encapsulates the die. The redistribution structure is disposed on the die and the encapsulant. The slot antenna is disposed above the redistribution structure. The insulating layer is sandwiched between the redistribution structure and the slot antenna. The conductive structures and the antenna confinement structure extend from the slot antenna to the redistribution structure.

A semiconductor package includes an integrated circuit (IC) structure, an insulating encapsulation laterally covering the IC structure, and a redistribution structure disposed on the insulating encapsulation and the IC structure. The redistribution structure is electrically connected to the IC structure. The IC structure includes a first die, a capacitor structure, a dielectric layer laterally covering the first die and the capacitor structure, and a second die disposed on the dielectric layer, the first die, and the capacitor structure. The second die interacts with the capacitor structure, where a bonding interface between the second die and the first die is substantially coplanar with a bonding interface between the second die and the dielectric layer. A manufacturing method of a semiconductor package is also provided.

Semiconductor package and manufacturing method thereof

A package structure includes a semiconductor die, an antenna substrate structure, and a redistribution layer. The semiconductor die is laterally wrapped by a first encapsulant. The antenna substrate structure is disposed over the semiconductor die, wherein the antenna substrate structure includes a circuit substrate and at least one antenna element inlaid in the circuit substrate. The redistribution layer is disposed between the semiconductor die and the antenna substrate structure, wherein the at least one antenna element is electrically connected with the semiconductor die through the circuit substrate and the redistribution layer. The at least one antenna element includes patch antennas.

Provided is a package structure including a first die; a plurality of through vias, aside the first die; a first encapsulant laterally encapsulating the first die and the plurality of through vias; a first redistribution layer (RDL) structure on first sides of the first die, plurality of through vias, and the first encapsulant; a second RDL structure on second sides of the first die, the plurality of through vias, and the first encapsulant; and a plurality of conductive connectors, electrically connected to the second RDL structure. Portions of the first RDL structure, the plurality of through vias, and the second RDL structure are electrically connected to each other and form a solenoid inductor laterally aside the first die.

Package structure including a solenoid inductor laterally aside a die and method of fabricating the same

An integrated fan-out (InFO) package includes a plurality of dies, an encapsulant, an insulating layer, a redistribution structure, a plurality of conductive structures, an antenna confinement structure, and a slot antenna. The encapsulant laterally encapsulates the dies. The insulating layer is disposed over the dies and the encapsulant. The redistribution structure is sandwiched between the insulating layer and the dies. The conductive structures and the antenna confinement structure are embedded in the insulating layer. The slot antenna is disposed on the insulating layer.

A package structure has a chip, a molding compound encapsulating the chip and an inductor structure disposed above the chip. A vertical projection of the inductor structure at least partially overlaps with a vertical projection of the chip.

Package structure and method of fabricating the same

A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A core layer and a dielectric layer are sequentially stacked over the package array. The core layer includes a plurality of cavities. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

Integrated fan-out package and manufacturing method thereof

Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a first molding material disposed around the integrated circuit die, and a through-via disposed within the first molding material. A first side of a redistribution layer (RDL) is coupled to the integrated circuit die, the through-via, and the first molding material. A second molding material is over a second side of the RDL, the second side of the RDL being opposite the first side of the RDL. The packaged semiconductor device includes an antenna over the second molding material.

Packaged semiconductor devices and packaging methods

A semiconductor device includes a semiconductor die having an insulative layer and a conductive feature in the insulative layer, and a shield in contact with a lateral surface of the conductive feature. In some embodiments, the lateral surface of the conductive feature is aligned with an edge of the insulating material.

Semiconductor device

An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, an antenna pattern, and an insulating layer. The chip package includes a semiconductor die and an insulating encapsulation enclosing the semiconductor die. The antenna pattern is electrically coupled to the chip package, where a material of the antenna pattern comprises a conductive powder having fused metal particles. The insulating layer disposed between the chip package and the antenna pattern, where the antenna pattern includes a first surface in contact with the insulating layer, and a second surface opposite to the first surface, and a surface roughness of the second surface is greater than a surface roughness of the first surface.

Growing community of inventors

Kaohsiung, Taiwan

Tzu-Chun Tang