Advanced Micro-fabrication Equipment Inc. China

Advanced Micro-fabrication Equipment, Inc.

Tuqiang Ni

Rason Zuo

Dee Wu

Kui Zhao

Sha Rin

Sheng Guo

Hiroshi Iizuka

Xiang Sun

Xingjian Chen

Shenjian Liu

Ruoxin Du

Kuan Yang

Steven Lee

Guangwei Fan

Hongqing Wang

Zhou Xiaofeng

Mei Rui

Disclosed are a temperature control apparatus for semiconductor processing equipment and a corresponding temperature control method, wherein each heating element in each row or each column in a heating element matrix forms a power return circuit with a same power source, respectively, and a same switch module is provided for the power return circuits of all heating elements in each column or each row of the heating element matrix; the input powers to the heating elements in an entire row or column controlled by each power output port of the power source are adjusted by adjusting the output power magnitude of the corresponding power source, and conduction/disconnection of the power return circuits of an entire column or row controlled by each switch module is controlled by controlling ON/OFF of each switch module. The present disclosure reduces circuit complexity and saves costs; the present disclosure reduces temperature control complexity while guaranteeing temperature control accuracy, thereby achieving a uniform and flexible temperature control result.

Temperature control apparatus for semiconductor processing equipment, and temperature control method for the same

Method for multi-zone temperature control system having temperature control matrix and gate driver; N*M temperature control modules form N-row M-column matrix, power supply line, and power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate being connected with the power supply line, and the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line at same row or same column are serially connected, and connected with the power supply line.

Control method for multi-zone active-matrix temperature control in plasma processing apparatus

Disclosed is a plasma treatment apparatus, a lower electrode assembly and a forming method thereof, wherein the lower electrode assembly includes: a base for carrying a substrate to be treated; a focus ring encircling a periphery of the base; a coupling loop disposed below the focus ring; a conductive layer disposed in the coupling loop; and a wire for electrically connecting the conductive layer and the base so that the base and the conducting layer are equipotential. The lower electrode assembly is less prone to cause arc discharge.

Plasma treatment apparatus, lower electrode assembly and forming method thereof

Disclosed is a plasma reactor, comprising: a reaction chamber; a base disposed at the bottom of the reaction chamber, configured for supporting a substrate; an RF power supply which outputs an RF power into the reaction chamber, wherein the base includes an electrostatic chuck, the electrostatic chunk including a set of heaters, the set of heaters including a plurality of heating modules, wherein each heating module includes one heater and one electronic switch which are connected in series, the heater in each heating module being connected to one of the heating power source and the ground, and the electronic switch being connected to the other one of the heating power source and the ground; a heating controller including a receive end configured for receiving a temperature control signal, and further a drive signal output end connected to the electronic switch, configured for outputting a drive signal of the electronic switch, wherein the heating controller further comprises at least one optoelectrical drive circuit to cause the receive end of the heating controller to be electrically isolated from the drive signal output end.

Multi-zone temperature control plasma reactor

A plasma reactor having tunable low frequency RF power coupling to annular electrode. The reaction chamber has electrically conductive base connected to a low frequency RF source via RF match. An electrostatic chuck is attached to the electrically conductive base. An outer sidewall of the electrically conductive base is coated with plasma corrosion-resistance dielectric layer. A coupling ring is made of a dielectric material and surrounds an outer perimeter of the base. A focus ring is disposed above the coupling ring, the focus ring being arranged to surround the electrostatic chuck and be exposed to the plasma. The plasma reactor further comprises an annular electrode that is disposed above the coupling ring but below the focus ring, a wire having a first end electrically connected to the base, and a second end connected to the annular electrode. A variable capacitance is serially connected to the wire.

Plasma reactor having a variable coupling of low frequency RF power to an annular electrode

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Shanghai, China

Tuqiang Ni