Taiwan Semiconductor Manufacturing Comp. Ltd.

Tung-Li Lee

Yen-Yu Chen

Chih-Hao Lin

Pu-Fang Chen

Chien-Rong Huang

Otto Chen

Fang-Chi Chien

Ko-Chin Chung

Jih-Hwa Wang

Fan-Lin Lu

Yao-Hui Huang

Yen-Fei Lin

Alan Chen

Shuo-Jieh Wu

James Sun

Chen Pu-Fang

Hsu Chun Yuan

David Huang

Steven Li

Kwun-Goo Hung

Hs Chiu

Sheng-Kuo Huang

Ming Jie He

Chih-Yuan Ke

Yu-Wei Hsueh

Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material.

Method of making and using alloy susceptor with improved properties for film deposition

A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.

Preventing dosage drift with duplicate dose integrators

The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.

Method for increasing polysilicon grain size

A method of calibrating a wafer edge gripping end effector. A wafer calibration tool is held in a stationary position simulating the position of a semiconductor wafer to be picked up by the wafer edge gripping end effector. A controller associated with a robot having an end effector attached to a robot arm thereto is turned off. The robot arm and end effector are moved to position where the first and second clamp structures on the end effector each engage a respective inner edge that in part defines a notch formed in the wafer calibration tool. An actuator driven movable clamp structure is manually advanced so that the movable clamp structure engages an inner edge that in part defines one of the notches formed in the wafer calibration tool. The controller is turned on and data regarding the location of robot arm, end effector and movable clamp structure is stored.

Method of calibrating a wafer edge gripping end effector

The present invention discloses a frictional mount for engaging a monitor to a process chamber by utilizing a base member that has at least three apertures therethrough adapted for mounting at least one monitor and two fastening devices, a compressible member formed of a deformable material that has at least three apertures adapted for the at least one monitor and the two fastening devices to pass through, the compressible member is positioned in intimate contact with the base member, and a pressing member that is in intimate contact with the compressible member and has at least one aperture adapted for the at least one monitor to be mounted therethrough and two apertures adapted for receiving two fastening devices such that when the two fastening devices are engaged, the compressible member expands in a lateral direction and frictionally engages the internal peripheral surfaces of a recessed window in the process chamber.

Frictional mount for engaging a monitor in a process chamber and method

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Jhubei, Taiwan

Tung-Li Lee