Vanguard International Semiconductor Corporation

Tung Chia Ching

Chao-Ming Koh

Rong-Wu Chien

Hsiao-Chiu Tuan

A process for forming a DRAM capacitor structure, comprised with a HSG silicon/polysilicon crown shaped storage node structure, has been developed. The process features the use of a series of wet clean procedures, used to prepare the surface of the HSG silicon/polysilicon, crown shaped storage node structure, for the formation of an overlying capacitor dielectric layer. A first wet clean procedure is employed after the formation of the crown shaped storage node structure via a CMP procedure, featuring an ammonium hydroxide--hydrogen peroxide solution, used to remove CMP, as well as HSG silicon particles from the surface of a photoresist plug used for definition of the crown shaped storage node structure. Another wet clean procedure, first performed in a DHF solution, then followed by a sulfuric acid--hydrogen peroxide treatment, is used to prepare the HSG silicon/polysilicon, crown shaped storage node structure, for formation of the overlying capacitor dielectric layer.

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Hsin-Chu, Taiwan

Tung Chia Ching