Japan Science and Technology Agency

Tue Trong Phan

Tatsuya Shimoda

Satoshi Inoue

Takaaki Miyasako

Jinwang Li

A thin film transistoraccording to the invention includes a gate electrode, a channel, and a gate insulating layerprovided between the gate electrodeand the channeland made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channelis made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Growing community of inventors

Tokyo, Japan

Tue Trong Phan