Tokyo Electron Limited

Nec Corporation

Shimadzu Corporation

Other

Renesas Electronics Corporation

Nec Electronics Corporation

Tokyo Electron Limi Ted

Tokai National Higher Education and Research System

Iwatani Corporation

Toyko Electron Limited

Ritsumeikan University

Tokyo Eletctron Limited

Tsuyoshi Moriya

Hiroyuki Nakayama

Hiroshi Nagaike

Jun Yamawaku

Fumihiko Uesugi

Natsuko Ito

Kouji Mitsuhashi

Ayuta Suzuki

Eiichi Sugawara

Nobuyuki Nagayama

Takahiro Murakami

Hidefumi Matsui

Yoshiyuki Kobayashi

Eiichi Nishimura

Satoshi Tanaka

Keisuke Kondoh

Toshio Hasegawa

Tetsuji Sato

Naotaka Noro

Munehito Kagaya

Hiroki Oka

Takamichi Kikuchi

Shinya Iwashita

Tadashi Mitsunari

Tatsuo Matsudo

Jun Ozawa

Shuji Moriya

Mitsuhiro Tachibana

Hiroshi Nakamura

Toshiya Matsuda

Yoshinori Kato

Kikuo Okuyama

Osamu Akiyama

Kazuyoshi Matsuzaki

Takashi Enomoto

Shosuke Endoh

Manabu Shimada

Songyun Kang

Nobutoshi Terasawa

Kazunori Kazama

Yoshinori Morisada

Kosuke Yamamoto

Hideaki Yakushiji

Masaki Fujimori

Tomoyuki Kudo

Masaru Aomori

Yoshiaki Okabe

Kazuhide Hasebe

Kazuya Nagaseki

Yasuharu Sasaki

Hideaki Yamasaki

Masaru Hori

Akitaka Shimizu

Atsushi Endo

Takuya Mori

Satoru Kawakami

Makoto Sekine

Toshiyuki Matsumoto

Asao Yamashita

Teruyuki Hayashi

Hiroshi Koizumi

Masaki Narushima

Atsushi Kubo

Michiko Nakaya

Naoki Ikeuchi

Ryo Nonaka

Masaaki Miyagawa

Yusuke Suzuki

Kenya Iwasaki

Tadahiro Ishizaka

Kaoru Fujihara

Yasutoshi Umehara

Kazuyuki Tezuka

Yuki Kataoka

Tadashi Onishi

Takaya Miyano

Michihiro Takahashi

Akira Uedono

Yoshitaka Enoki

Kunio Miyauchi

Machi Moriya

Kazuki Dempoh

Yasushi Morita

Hiroyuki Onoda

Shinichi Kawaguchi

Kazumasa Abe

Takayuki Kokubo

Masashi Akimoto

Tokio Toyama

Takahiro Shindo

Hirotsugu Sugiura

Yukiteru Sekita

Kazuma Kubota

Syunsuke Toyoizumi

Katsuyuki Takahiro

A film forming method is provided. In the film forming method, a mask is prepared based on a measurement result of a surface state of a substrate. The mask is transferred into a process chamber and the substrate is transferred into the process chamber. Then, a film is formed on a back surface of the substrate while the mask is disposed onto the back surface of the substrate.

Film forming method and semiconductor production apparatus

In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.

Hard mask, substrate processing method, and substrate processing apparatus

A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Film forming apparatus

There is provided a plasma processing device. The plasma processing device comprises: a processing chamber; a partition plate that has an insulating property, and configured to partition a space in the processing chamber into a reaction chamber in which an object to be processed is mounted and a plasma generating chamber in which plasma is generated, wherein a first electrode is provided on a surface of the partition plate on the side of the plasma generating chamber, and the partition plate has a plurality of through holes formed for supplying active species contained in the plasma generated in the plasma generating chamber to the reaction chamber; a second electrode disposed in the plasma generating chamber so as to face the first electrode; and a power supply configured to supply high-frequency power obtained by phase-controlling and superimposing high-frequency powers of a plurality of frequencies to one of the first electrode and the second electrode when the plasma is generated in the plasma generating chamber.

Plasma processing device, and plasma processing method

According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CHand a methyl group CHcontained in the carbon hard mask satisfies the expression CH/(CH+CH)≥0.5.

Carbon hard mask, film forming apparatus, and film forming method

A contaminant detection system includes a light source configured to emit excitation light on an object to be inspected; a detector configured to detect fluorescence emitted from a contaminant adhering to the object to be inspected; and a processor. The fluorescence is caused by emission of the excitation light from the light source onto the object to be inspected. The processor is configured to perform a determination of a location of the contaminant and a type of the contaminant, based on the fluorescence emitted from the contaminant; and output a result of the determination.

Contaminant detection system, contaminant detecting method, and semiconductor manufacturing apparatus

The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times.

Etching method

A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Plasma processing method

A temperature measurement substrate according to an embodiment of the present disclosure includes: a substrate which is any one of a semiconductor wafer and a substrate for a flat panel display; and at least one optical fiber laid on a surface of the substrate and having a first pattern portion and a second pattern portion formed more densely than the first pattern portion.

Temperature measurement substrate and temperature measurement system

Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.

Film forming method

A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.

Film forming apparatus and film forming method

In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports.

Substrate processing apparatus

A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A(=Q&#xd7;m) of the flow rate Qand the molecular weight mof the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program

Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.

Etching method, etching apparatus, and ring member

A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign materialplaced in a near-vacuum, producing clustersmade up of a multitude of gas molecules, and the clusterscollide with the wafer W without undergoing ionization.

Substrate cleaning method and substrate cleaning device

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Nirasaki, Japan

Tsuyoshi Moriya