Hoya Corporation

Osaka University

Tsutomu Shoki

Kazuhiro Hamamoto

Yohei Ikebe

Hirofumi Kozakai

Toshihiko Orihara

Junichi Horikawa

Tatsuo Asakawa

Youichi Usui

Takahiro Onoue

Morio Hosoya

Takamitsu Kawahara

Masanori Nakagawa

Takumi Kobayashi

Yuki Shiota

Shinichi Ishibashi

Osamu Maruyama

Akihiro Kawahara

Mitsuhiro Kureishi

Takeru Kinoshita

Ryo Ohkubo

Kazuto Yamauchi

Takeyuki Yamada

Akinori Kurikawa

Kesahiro Koike

A reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank comprises a substrate, a multilayer reflection film on the substrate, and an absorber film on the multilayer reflection film. The reflective mask blank is characterized in that: the absorber film includes an absorption layer and a reflectance adjustment layer; the absorption layer contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer includes a lower surface region including a surface on the substrate side, and an upper surface region including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region and the concentration (at. %) of the added element in the upper surface region are different.

Reflective mask blank, reflective mask, and method for manufacturing semiconductor device

A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.

Reflective mask blank and reflective mask

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).

Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method

Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern while suppressing an increase in the thickness of an absorber film when EUV exposure is conducted in an atmosphere including hydrogen gas. A reflective mask blank () comprises a substrate (), a multilayer reflection film () on the substrate, and an absorber film () on the multilayer reflection film. The reflective mask blank () is characterized in that: the absorber film () includes an absorption layer () and a reflectance adjustment layer (); the absorption layer () contains tantalum (Ta), nitrogen (N), and at least one added element selected from hydrogen (H) and deuterium (D); the absorption layer () includes a lower surface region () including a surface on the substrate side, and an upper surface region () including a surface on the side opposite to the substrate; and the concentration (at. %) of the added element in the lower surface region () and the concentration (at. %) of the added element in the upper surface region () are different.

Reflective mask blank, reflective mask, and method for manufacturing reflective mask and semiconductor device

A substrate with a multilayer reflective film, a reflective mask blank, a reflective mask and a method of manufacturing a semiconductor device that can prevent contamination of the surface of the multilayer reflective film even in the case of having formed reference marks on the multilayer reflective film. A substrate with a multilayer reflective film contains a substrate and a multilayer reflective film that reflects EUV light formed on the substrate. Reference marks are formed to a concave shape on the surface of the substrate with the multilayer reflective film. The reference marks have grooves or protrusions roughly in the center. The shape of the grooves or protrusions when viewed from overhead is similar or roughly similar to the shape of the reference marks.

Reflective structure, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Provided is a reflective mask blank for manufacturing a reflective mask capable of suppressing peeling of an absorber pattern when EUV exposure is performed in an atmosphere comprising a hydrogen gas. A reflective mask blank comprises: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film. The absorber film comprises an absorption layer and a reflectance adjustment layer. The absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D). A content of the boron (B) in the absorption layer is more than 5 atomic %. A content of the additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.

Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k<α*n+β is defined as Group B, the alloy is such that the composition ratio is adjusted so that the amount of change in the phase difference is within the range of ±2 degrees and the amount of change in reflectance is within the range of ±0.2% when one or more types of metal element each is selected from the Group A and the Group B and the film thickness of the phase shift film has fluctuated by ±0.5% with respect to a set film thickness (provided that α: proportional constant, β: constant).

Reflective mask blank, reflective mask and method of manufacturing semiconductor device

A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.

Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device

Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

A substrate with a conductive film for manufacturing a reflective mask which has a rear-surface conductive film with high mechanical strength and is capable of correcting positional deviation of the reflective mask from the rear surface side by a laser beam or the like. A substrate with a conductive film has a conductive film formed on one surface of a main surface of a mask blank substrate used for lithography, wherein the conductive film includes a transparent conductive layer provided on a substrate side and an upper layer provided on the transparent conductive layer, the conductive film has a transmittance of 10% or more for light of wavelength 532 nm, the upper layer is made of a material including tantalum (Ta) and boron (B), and the upper layer has a film thickness of 0.5 nm or more and less than 10 nm.

Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method

Growing community of inventors

Tokyo, Japan

Tsutomu Shoki