Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

International Business Machines Corporation

Chang Chun Plastics Co., Ltd.

Industrial Technology Research Institute

Tsung-Yu Chen

Wensen Hung

Tsung-Shu Lin

Hung-Chi Li

Chien-Yuan Huang

Hsien-Pin Hu

Wen-Hsin Wei

Chen-Hsiang Lao

Shang-Yun Hou

Chi-Hsi Wu

Sung-Hui Huang

Kuan-Yu Huang

Shih-Chang Ku

Chia-Chen Chen

Chen-Hua Douglas Yu

Ming-Fa Chen

Jeng-Horng Chen

Shinn-Sheng Yu

Cheng-Chieh Hsieh

Kuen-Yuan Hwang

Sao-Ling Chiu

Li-Chung Kuo

Bruce Alan Smith

Ping-Kang Huang

Jung-Tai Chen

Tzongli Lin

Jenseng J S Chen

Edward Yu-Chen Kung

Shin-Puu Jeng

Chia-Shiung Tsai

Chih-Ming Chen

Wei-Cheng Wu

Shang-Chieh Chien

Chung-Yi Yu

Chia-Hao Hsu

Xiaomeng Chen

Li-Han Hsu

Szu-Yu Wang

Shu-Hao Chang

Chien-Chia Chiu

Jui-Ching Wu

Ming-Chin Chien

Chia-Ching Huang

Shu-Chia Hsu

Tzu-Hsiang Chen

Yu-Ling Tsai

Hong-Hsing Chen

Yu-Wei Chen

Cheng-Te Lee

Jui-Hsieh Lai

Chih-Kai Cheng

Yi-Wei Liu

Chien-Fu Tseng

Che-Yu Yeh

Leu-Jen Chen

Ching Fu Kao

Chung-Ju Lee

Tien-I Bao

Chih-Hang Tung

Tung-Liang Shao

Chieh-Han Wu

Yu-Fu Lin

Jia-Syuan Li

Tsing-Tang Song

Wei-Chan Tseng

Hsuan-Ning Shih

Chih-Shin Chuang

Yih-Ting Shen

A manufacturing method of a semiconductor package includes the following steps. A package structure is provided over a substrate. A thermal interface layer is provided over the package structure. A lid structure is provided over the substrate, wherein the lid structure comprises a main body in contact with the package structure through the thermal interface layer and surrounding the package structure and a plurality of rib portions protruded from the main body and extended toward the package structure.

Method of manufacturing semiconductor package having lid structure

A semiconductor device including a package, a lid and a thermal interface material is provided. The package includes a packaging substrate, semiconductor dies and an insulating encapsulation, wherein the semiconductor dies are disposed on and electrically connected to the packaging substrate, and the insulating encapsulation encapsulates the semiconductor dies. The lid is disposed on the packaging substrate, the lid includes a cover portion and foot portion extending from the cover portion to the packaging substrate, wherein the cover portion covers the semiconductor dies and the insulating encapsulation, the foot portion includes foot segments laterally spaced apart from one another, and the foot segments are attached to the packaging substrate. The cover portion of the lid is attached to the package through the thermal interface material.

Semiconductor device

A semiconductor package module includes a package, a conductive layer, and a heat dissipating module. The package includes a semiconductor die. The conductive layer is disposed over the package. The heat dissipating module is disposed over the conductive layer, and the package and the heat dissipating module prop against two opposite sides of the conductive layer, where the heat dissipating module is thermally coupled to and electrically isolated from the package through the conductive layer.

Semiconductor package module and manufacturing methods thereof

A stacked via structure disposed on a conductive pillar of a semiconductor die is provided. The stacked via structure includes a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer, a second conductive via, and a second redistribution wiring. The first dielectric layer covers the semiconductor die. The first conductive via is embedded in the first dielectric layer and electrically connected to the conductive pillar. The first redistribution wiring covers the first conductive via and the first dielectric layer. The second dielectric layer covers the first dielectric layer and the first redistribution wiring. The second conductive via is embedded in the second dielectric layer and landed on the first redistribution wiring. The second redistribution wiring covers the second conductive via and the second dielectric layer. A lateral dimension of the first conductive via is greater than a lateral dimension of the second conductive via.

Stacked via structure disposed on a conductive pillar of a semiconductor die

A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Semiconductor structure and manufacturing method thereof

A semiconductor package includes a chip package disposed on a substrate, a plurality of electronic components disposed aside the chip package on the substrate and a stiffener structure disposed on the substrate. The stiffener structure includes a stiffener ring surrounding the chip package and the plurality of electronic components, a stiffener rib between the chip package and the plurality of electronic components, wherein the stiffener rib includes a first portion and a second portion on the first portion, and a width of the second portion is greater than a width of the first portion. The semiconductor package further includes a lid attached to the stiffener structure, the chip package and the plurality of electronic components. A method of forming the semiconductor package is also provided.

Semiconductor package with stiffener structure and method forming the same

A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.

Semiconductor device having heat dissipation structure of curved profile and a manufacturing method thereof

A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.

Package structure

A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.

Semiconductor package and method of forming the same

An apparatus for manufacturing packaged semiconductor devices includes a lower plate having package platforms and clamp guide pins to align an upper plate with the lower plate, and a boat tray having windows configured to receive package devices, and a plurality of upper plates configured to be aligned to respective windows and respective package platforms. Clamping force can be applied by fasteners configured to generate a downward force upon the upper plate. Package devices on the platforms are thus subjected to a clamping force. Load cells measure the clamping force so adjustments can be made.

Package structure and method and equipment for forming the same

A semiconductor package includes a substrate, a package structure, and a lid structure. The package structure is disposed on the substrate. The lid structure is disposed over substrate, wherein the lid structure includes a main body covering and surrounding the package structure and a plurality of rib portions protruded from the main body and extended toward the package structure.

Semiconductor package with lid structure

A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

Package structure including through via structures

A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

Semiconductor package with stiffener structure

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Hsinchu, Taiwan

Tsung-Yu Chen