Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung-Yi Yang

Chien-Chih Chen

Mu-Han Cheng

Su-Yu Yeh

Kuo-Hsien Cheng

Tzu-Shin Chen

Chung-I Hung

Manikandan Arumugam

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.

Semiconductor structure and manufacturing method thereof

A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

Method for bonding wafers and bonding tool

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Tainan, Taiwan

Tsung-Yi Yang