Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung-Yang Hung

Ming-Yih Wang

Chi-Che Wu

Jia-Ming Guo

Tsung-Hsien Tsai

Chien-Hung Zordius Chen

Min-Shueh Yuan

Ker-Min Chen

Kuo-Liang Deng

Aaron Wang

Edna Fang

Yi-Na Fang

An apparatus for testing a device under test (DUT) is provided. The apparatus includes a power supply device and a data generating device. The power supply device is configured to provide a first voltage and a second voltage to the DUT. The data generating device is configured to provide first data to the DUT. The power supply device is configured to provide the first voltage to the DUT in a first time duration. The data generating device is configured to provide the first data to the DUT in the first time duration. The power supply device is configured to provide the second voltage to the DUT in a second time duration after the first time duration. The second voltage is different from the first voltage.

Method and apparatus for detecting defective logic devices

A method is provided and includes several operations: testing multiple scan chains in multiple shift cycles to obtain multiple values; determining at least one fail chain in the scan chains and determining at least one fail shift cycle corresponding to at least one fail value in the values; mapping the at least one fail chain and the at least one fail shift cycle to the scan chains to identify the at least one fail flip flop; and identifying at least one fault site corresponding to the at least one fail flip flop.

Method and system for testing an integrated circuit

A circuit screening system including a target circuit under test receiving a first testing signal in a first period and a second testing signal in a second period; a power circuit providing a supply voltage to the target circuit under test, the supply voltage maintaining at a first voltage level in the first period and deviating from the first voltage level, and maintaining at the first voltage level in the second period; and a clock generating circuit providing a clock signal to the target circuit under test, the clock signal triggering the target circuit under test to receive the first testing signal in the first period and the second testing signal in the second period; the clock signal having a first profile and a second profile in the first period and the second period, respectively, and the first profile and the second profile having a phase difference.

Circuit screening system and circuit screening method

A method is provided in the present disclosure. The method includes several operations: generating, by a processing unit, a mapping table associated with multiple scan chains and multiple shift cycles corresponding to multiple values stored in the scan chains in an integrated circuit; determining, based on the mapping table, at least one fail flip flop in the scan chains in response to the values outputted from the scan chains; and identifying at least one fault site corresponding to the at least one fail flip flop.

A circuit screening system includes a target circuit under test, a power circuit, and a clock generating circuit. The target circuit under test receives a first testing signal in a first period, and a second testing signal in a second period, and the first testing signal is different from the second testing signal. The power circuit provides a supply voltage to the target circuit under test, wherein a voltage level of the supply voltage maintains at a first voltage level in the first period, is pulled up to a second voltage level and back to the first level after the first period, and maintains at the first voltage level in a second period after the first period. The clock generating circuit provides a clock signal to the target circuit under test, wherein the clock signal has different profiles in the first period and the second period.

A method includes: determining a defective area in a semiconductor device of a semiconductor wafer; thinning the semiconductor wafer from a backside of the semiconductor wafer; bonding a first substrate to the backside of the semiconductor wafer, wherein the first substrate includes an opening and the defective area is exposed through the opening; and performing a test on the defective area by projecting a light beam from the backside through the opening.

Failure analysis method with improved detection accuracy for advanced technology node

A method for wafer level testing is provided which includes providing a wafer having an integrated circuit formed thereon, applying a signal to energize the integrated circuit, the signal including increasing steps or decreasing steps that range between a first level and a second level, and determining whether the integrated circuit complies with a test criteria after applying the signal.

Method for wafer-level testing of integrated circuits

A test system for testing a large number of dice on a semiconductor wafer without repositioning test probes is disclosed. The test system includes a set of dice under test (DUT) connected together by a plurality of signal buses formed on a semiconductor wafer, at least one test die designed for carrying out tests of the dice under test, the test die having a set of pads to be connected to one or more probes of an external test apparatus, and a probe card with at least one multiplexer implemented in the probe card, such that the test die is capable of receiving signals from the external test apparatus to select any die under test within the set via the multiplexer and the signal buses without repositioning the probes.

Apparatus for mass die testing

An integrated circuit device includes a first pad and a second pad; electrostatic discharging (ESD) devices coupling the first pad and the second pad to a discharging path; a transformer including a first end, a second end, a third end and a fourth end, wherein the first end and the second end are coupled to the first pad and the second pad, respectively; and a transceiver circuit coupled to the first end and the second end of the transformer.

Enhancing bandwidth of ESD network using transformers

A Phase Lock Loop (PLL) with gain control is provided. The PLL has a dual-path configuration, where a first and a second VCO control voltage are generated in response to a phase or frequency difference between a PLL input signal and an output signal. The PLL comprises a dynamic voltage gain control (DVGC) unit and a voltage-to-current (V2I) unit, where the DVGC creates a baseline reference current in response to the first VCO control voltage and the V2I provides a substantially linear current in response to the second VCO control voltage. The currents from the DVGC and V2I are combined and fed into a current-controlled oscillator, which generates a PLL output frequency signal. Frequency gain of the VCO is substantially reduced, thus providing a PLL with improved tuning precision.

Phase lock loop (PLL) with gain control

In one embodiment, the disclosure relates to a method and apparatus for inter-chip wireless communication system. The system includes a first microprocessor having a plurality of non-contact ports and a first RF communication circuit integrated with the first microprocessor; a second microprocessor also having a plurality of non-contact ports and a second RF communication circuit integrated therein. An RF communication protocol can be configured to receive data from each of the non-contact ports in parallel, multiplex and translate the data to a serial RF signal. Data communication can be accomplished using the wireless communication circuit on each chip. The RF communication between the first and the second integrated circuits using the communication protocol defines a non capacitive-coupling of the first and the second die.

Growing community of inventors

Hsinchu County, Taiwan

Tsung-Yang Hung