Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung-Hsien Chiang

Hao-Yi Tsai

Tin-Hao Kuo

Tzu-Sung Huang

Ming Hung Tseng

Chen-Hua Douglas Yu

Ban-Li Wu

Chen-Shien Chen

Yu-Chih Huang

Chih-Hsuan Tai

Ying-Cheng Tseng

Chih-Wei Lin

Ching-Hua Hsieh

Chih-Hao Chang

Yen-Liang Lin

Chen-Cheng Kuo

Yao-Chun Chuang

Chita Chuang

Hao-Juin Liu

Ming-Hong Cha

Ming-Da Cheng

Wei Sen Chang

Shing-Chao Chen

Chung-Shi Liu

Chia-Hung Liu

Ming-Hung Tseng

Po-Chun Lin

Hsiu-Jen Lin

Ching-Wen Hsiao

Tsung-Yuan Yu

Tzuan-Horng Liu

Cheng-Chieh Hsieh

Hsien-Ming Tu

Chi-Hui Lai

Chung-Ming Weng

Ting-Ting Kuo

Yen-Chang Hu

Chiahung Liu

Kris Lipu Chuang

Hui-Chun Chiang

Yu-Hsiang Hu

Hung-Yi Kuo

Chien-Ling Hwang

Hsin-Hung Liao

Guan-Yu Chen

Wei-Sen Chang

Jen-Fu Liu

Wei-Chih Chen

Hsin-Yu Pan

Chien-Hsun Chen

Chao-Hsien Huang

Chao-Wei Li

Lipu Kris Chuang

Yi-Che Chiang

Chun-Ti Lu

Wei-Kang Hsieh

Tuan-Yu Hung

Kai-Ming Chiang

Ching Yao Lin

Wei Lun Tsai

A method includes forming a first metal mesh over a carrier, forming a first dielectric layer over the first metal mesh, and forming a second metal mesh over the first dielectric layer. The first metal mesh and the second metal mesh are staggered. The method further includes forming a second dielectric layer over the second metal mesh, attaching a device die over the second dielectric layer, with the device die overlapping the first metal mesh and the second metal mesh, encapsulating the device die in an encapsulant, and forming redistribution lines over and electrically connecting to the device die.

Staggered metal mesh on backside of device die and method forming same

A method of manufacturing a semiconductor package includes depositing a first dielectric layer over a carrier substrate. A first metallization pattern is formed over the first dielectric layer. The first metallization pattern has a first opening exposing the first dielectric layer. A second dielectric layer is deposited over the first metallization pattern, forming a dielectric slot through the first metallization pattern by filling the first opening. A second metallization pattern and a third dielectric layer are formed over the second dielectric layer. A through via is formed over the third dielectric layer, so that the dielectric slot is laterally under the through via.

Dielectric slots underneath conductive vias in interconnect structure of semiconductor package and method of forming the same

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

Method of fabricating semiconductor package

A package structure includes a thermal dissipation structure including a substrate, a first encapsulant laterally covering the substrate, a die disposed on the substrate and including a sensing region, a second encapsulant laterally covering the die, and a redistribution structure disposed on the die and the second encapsulant. An outer sidewall of the second encapsulant is laterally offset from an outer sidewall of the first encapsulant. The die is electrically coupled to the substrate through the redistribution structure, and the redistribution structure includes a hollow region overlying the sensing region of the die.

Package structure and method of forming the same

A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

A semiconductor package includes an encapsulated semiconductor device, a backside redistribution structure, and a front side redistribution structure. The encapsulated semiconductor device includes an encapsulating material and a semiconductor device encapsulated by the encapsulating material. The backside redistribution structure is disposed on a backside of the encapsulated semiconductor device and includes a redistribution circuit layer and a first patterned dielectric layer. The redistribution circuit layer has a circuit pattern and a dummy pattern electrically insulated from the circuit pattern. The dummy pattern is overlapped with the semiconductor device from a top view of the semiconductor package. The first patterned dielectric layer is disposed on the redistribution circuit layer and includes a marking pattern disposed on the dummy pattern and revealing a part of the dummy pattern. The front side redistribution structure is disposed on a front side of the encapsulated semiconductor device and electrically connected to the semiconductor device.

Semiconductor package

In an embodiment, a device includes: a sensor die having a first surface and a second surface opposite the first surface, the sensor die having an input/output region and a first sensing region at the first surface; an encapsulant at least laterally encapsulating the sensor die; a conductive via extending through the encapsulant; and a front-side redistribution structure on the first surface of the sensor die, the front-side redistribution structure being connected to the conductive via and the sensor die, the front-side redistribution structure covering the input/output region of the sensor die, the front-side redistribution structure having a first opening exposing the first sensing region of the sensor die.

Sensor packages

In an embodiment, a device includes: a back-side redistribution structure including: a metallization pattern on a first dielectric layer; and a second dielectric layer on the metallization pattern; a through via extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent the through via on the first dielectric layer; a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; a conductive connector extending through the second dielectric layer to contact the metallization pattern, the conductive connector being electrically connected to the through via; and an intermetallic compound at the interface of the conductive connector and the metallization pattern, the intermetallic compound extending only partially into the metallization pattern.

Semiconductor packages

A package structure is provided. The package structure includes a semiconductor chip and a first dielectric layer over the semiconductor chip and extending across opposite sidewalls of the semiconductor chip. The package structure also includes a conductive layer over the first dielectric layer, and the conductive layer has multiple first protruding portions extending into the first dielectric layer. The package structure further includes a second dielectric layer over the first dielectric layer and the conductive layer. The second dielectric layer has multiple second protruding portions extending into the first dielectric layer. Each of the first protruding portions and the second protruding portions is thinner than the first dielectric layer.

Package structure with fan-out feature

A method for forming a chip package is provided. The method includes disposing a semiconductor die over a carrier substrate and forming a protection layer over the carrier substrate to surround the semiconductor die. The method also includes forming a dielectric layer over the protection layer and the semiconductor die. The method further includes planarizing a first portion of the dielectric layer and planarizing a second portion of the dielectric layer after the first portion of the dielectric layer is planarized. In addition, the method includes forming a conductive layer over the dielectric layer after the first portion and the second portion of the dielectric layer are planarized.

Formation method of chip package with fan-out structure

In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.

Integrated circuit package and method

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

Semiconductor package and method of fabricating the same

A method of manufacturing a semiconductor package includes the following steps. A backside redistribution structure is formed, wherein the backside redistribution structure comprises a first dielectric layer, and a redistribution metal layer over the first dielectric layer and comprising a dummy pattern. A semiconductor device is provided over the backside redistribution structure, wherein an active surface of the semiconductor device faces away from the backside redistribution structure, the semiconductor device is electrically insulated from the dummy pattern and overlapped with the dummy pattern from a top view of the semiconductor package. A front side redistribution structure is formed over the semiconductor device, wherein the front side redistribution structure is electrically connected to the semiconductor device. A patterning process is performed on the first dielectric layer to form a marking pattern opening exposing a part of the dummy pattern.

Method of manufacturing semiconductor package

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Hsinchu, Taiwan

Tsung-Hsien Chiang