Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsung-Fu Tsai

Szu-Wei Lu

Yian-Liang Kuo

Shih-Ting Lin

Chia-Wei Tu

Chen-Hsuan Tsai

Hsien-Wei Chen

Ying-Ching Shih

Chih-Horng Chang

Kung-Chen Yeh

Ming-Song Sheu

I-Ting Huang

Wen-Hsiung Lu

Pu Wang

Ru-Ying Huang

Min-Feng Ku

Tin-Hao Kuo

Hung-Wei Tsai

Chen-Hua Douglas Yu

Hou-Ju Huang

Yi-Jung Chen

Jing-Cheng Lin

Chen-Shien Chen

Han-Ping Pu

Li-Hui Cheng

Chih-Wei Wu

Chin-Fu Kao

Chin-Chuan Chang

Ting-Yu Yeh

Yu-Ling Tsai

Jiun-Ting Chen

Chung-Chieh Ting

Po-Hao Tsai

Chih-Hang Tung

Hsing-Kuo Hsia

Yu-Chang Lin

Li-Chung Kuo

Shih Ting Lin

Ying Ching Shih

Wei-Lun Hsieh

Wei-An Tsao

Wei-Min Wu

Justin Huang

Chen Chiang Yu

A semiconductor package including a cooling system and a method of forming are provided. The semiconductor package may include an interposer, one or more package components bonded to the interposer, an encapsulant on the interposer, and a cooling system over the one or more package components. The cooling system may include one or more metal layers on top surfaces of the one or more package components, first metal pins on the one or more metal layers, second metal pins, wherein each of the second metal pins may be bonded to a corresponding one of the first metal pins by solder, and a first lid over the second metal pins, wherein the first lid may include openings.

Semiconductor package and method

A semiconductor package includes a first semiconductor die, a second semiconductor die, a semiconductor bridge, an integrated passive device, a first redistribution layer, and connective terminals. The second semiconductor die is disposed beside the first semiconductor die. The semiconductor bridge electrically connects the first semiconductor die with the second semiconductor die. The integrated passive device is electrically connected to the first semiconductor die. The first redistribution layer is disposed over the semiconductor bridge. The connective terminals are disposed on the first redistribution layer, on an opposite side with respect to the semiconductor bridge. The first redistribution layer is interposed between the integrated passive device and the connective terminals.

Semiconductor package and manufacturing method thereof

A semiconductor package includes a first integrated circuit, a plurality of first through vias and a plurality of fin-shaped through vias. The first through vias surround the first integrated circuit. The fin-shaped through vias are physically connected to the first through vias respectively, wherein the first through vias are disposed between the first integrated circuit and the fin-shaped through vias.

Semiconductor packages

A package structure including an interposer, at least one semiconductor die and an insulating encapsulation is provided. The interposer includes a semiconductor substrate and an interconnect structure disposed on the semiconductor substrate, the interconnect structure includes interlayer dielectric films and interconnect wirings embedded in the interlayer dielectric films, the semiconductor substrate includes a first portion and a second portion disposed on the first portion, the first interconnect structure is disposed on the second portion, and a first maximum lateral dimension of the first portion is greater than a second maximum lateral dimension of the second portion. The at least one semiconductor die is disposed over and electrically connected to the interconnect structure. The insulating encapsulation is disposed on the first portion, wherein the insulating encapsulation laterally encapsulates the least one semiconductor die and the second portion.

Package structure and method of fabricating the same

In an embodiment, a device bonding apparatus is provided. The device bonding apparatus includes a first process station configured to receive a wafer; a first bond head configured to carry a die to the wafer, wherein the first bonding head includes a first rigid body and a vacuum channel in the first rigid body for providing an attaching force for carrying the die to the wafer; and a second bond head configured to press the die against the wafer, the second bond head including a second rigid body and an elastic head disposed over the second rigid body for pressing the die, the elastic head having a center portion and an edge portion surrounding the center portion, the center portion of the elastic head having a first thickness, the edge portion of the elastic head having a second thickness, the second thickness being greater than the second thickness.

Device bonding apparatus and method of manufacturing a package using the apparatus

A package assembly may include a package substrate, a package lid attached to the package substrate and including a plate portion, an outer foot extending from the plate portion, and an inner foot extending from the plate portion inside the outer foot, and an adhesive that adheres the outer foot to the package substrate and the inner foot to the package substrate.

Package assembly including a package lid having an inner foot and methods of making the same

A package includes a laser diode includes a bonding layer; a first dielectric layer over the laser diode, wherein the first dielectric layer is directly bonded to the bonding layer of the laser diode; a first silicon nitride waveguide in the first dielectric layer, wherein the first silicon nitride waveguide extends over the laser diode; a second dielectric layer over the first silicon nitride waveguide; a silicon waveguide in the second dielectric layer; an interconnect structure over the silicon waveguide; and conductive features extending through the first dielectric layer and the second dielectric layer to electrically contact the interconnect structure.

Photonic package and method of manufacture

An inspection apparatus for inspecting a semiconductor workpiece includes a testing stage, a first seal member, a testing clamp, a second seal member, a semiconductor workpiece, and a transducer. The testing stage has a cavity. The first seal member is disposed in the cavity. The first seal member is attached to a sidewall of the cavity. The testing clamp is movably coupled to the testing stage. The second seal member is attached to the testing clamp. The semiconductor workpiece is held between the testing stage and the testing clamp by the first seal member and the second seal member. The transducer is movably disposed above the testing stage.

Inspection apparatus, manufacturing method of integrated circuit, and inspection method

A semiconductor device includes a semiconductor die and a conductive structure disposed side-by-side and spaced apart from each other through an insulating encapsulant. The conductive structure includes a first conductor laterally covered by the insulating encapsulant, and a second conductor disposed over and separating from the first conductor. The second conductor includes a first portion laterally covered by the insulating encapsulant and a second portion protruded from the insulating encapsulant, where a ratio of a first standoff height of the first portion and a second standoff height of the second portion ranges from about 0.4 to about 1.5.

Electronic device and manufacturing method thereof

A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, an encapsulant, a protection layer and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The encapsulant is disposed over the interposer and laterally encapsulating the at least one semiconductor die. The connectors are disposed on the second surface of the interposer and electrically connected with the at least one semiconductor die through the interposer. The protection layer is disposed on the second surface of the interposer and surrounding the connectors. The sidewalls of the interposer include slanted sidewalls connected to the second surface, and the protection layer is in contact with the slant sidewalls of the interposer.

A package structure includes a redistribution circuit structure, a wiring substrate, an insulating encapsulation, and a reinforcement structure. The redistribution circuit structure has dielectric layers. The wiring substrate is disposed on the redistribution circuit structure. The insulating encapsulation laterally encapsulates the wiring substrate. The reinforcement structure includes reinforcement pattern layers and reinforcement vias. The reinforcement pattern layers and the dielectric layers are stacked alternately. The reinforcement vias penetrate through the dielectric layers to connect the reinforcement pattern layers. At least one of the reinforcement pattern layers is embedded in the insulating encapsulation. The reinforcement structure is electrically floating.

Package structure and manufacturing method thereof

A pickup apparatus for separating a semiconductor die adhered on an adhesive film therefrom includes a frame, an UV light emitting element, and a collector element. The frame is configurated to hold the adhesive film adhered with the semiconductor die thereon. The UV light emitting element is disposed inside the frame, where the adhesive film is disposed between the semiconductor die and the UV light emitting element. The collector element is disposed over the frame.

Pickup apparatus and method of using the same

Package structure

A structure including a first semiconductor die, an interposer and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate and conductive vias disposed on the interconnect structure. The interposer includes a dielectric layer and through vias penetrating through the dielectric layer. The first insulating encapsulation laterally encapsulates the first semiconductor die and the interposer, wherein a thickness of the dielectric layer of the interposer substantially equals to a thickness of the first semiconductor die and a thickness of the first insulating encapsulation.

A method of fabricating a semiconductor device is provided, including providing a base substrate and a die stacking unit mounted on the base substrate. Conductive joints are connected between two adjacent dies of the die stacking unit. The method further includes providing dummy micro bumps and dummy pads between the two adjacent dies and between the conductive joints. The dummy micro bumps and the dummy pads are connected to one of the two adjacent dies but not to the other, and the dummy micro bumps are formed on some of the dummy pads but not on all of the dummy pads. In addition, the method includes filling the gaps between the base substrate, all dies of the die stacking unit, the conductive joints, the dummy micro bumps, and the dummy pads with an underfill material by capillary attraction.

Method of fabricating semiconductor device having dummy micro bumps between stacking dies

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Changhua, Taiwan

Tsung-Fu Tsai