Taiwan Semiconductor Manufacturing Comp. Ltd.

Parabellum Strategic Opportunities Fund LLC

Tsung-Ding Wang

Chien-Hsun Lee

Jung Wei Cheng

Hao-Cheng Hou

Chen-Hua Douglas Yu

Hung-Jen Lin

Jung-Wei Cheng

Chung-Shi Liu

Mirng-Ji Lii

Chien-Hsiun Lee

Bo-I Lee

Chun-Chih Chuang

Jiun Yi Wu

Chen-Shien Chen

Hsin-Yu Pan

Ming-Che Liu

Ming-Da Cheng

Kai-Ming Ching

Yu-Min Liang

Ching-Wen Hsiao

Yu-min Liang

Wei-Yu Chen

Kuo-Chung Yee

Wen-Hsiung Lu

Chien Ling Hwang

Yu-Feng Chen

Hai-Ming Chen

Hsien-Wei Chen

Jiun-Yi Wu

Chi-Yang Yu

Ming-Chung Sung

Wen-Chih Chiou

Hung-Jui Kuo

An-Jhih Su

Yu-Hsiang Hu

Ying-Ju Chen

Han-Ping Pu

Tsung-Yuan Yu

Chun-Hung Lin

Sih-Hao Liao

Weng-Jin Wu

Ku-Feng Yang

Wei-Chih Chen

Ming Hung Tseng

Chin-Liang Chen

Kim Hong Chen

Chien-Hsun Chen

Li-Wei Chou

Yung Ching Chen

Yen-Fu Su

Ming-Hong Tseng

Hao-Yi Tsai

Yen-Liang Lin

Wei-Ting Lin

Hon-Lin Huang

Sao-Ling Chiu

Yu-Chih Liu

Clinton Chao

Yi-Yang Lei

Ping-Kang Huang

Chi-Ming Huang

Jing Ruei Lu

Shou-Yi Wang

C W Hsiao

A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.

Multi-die package structures including an interconnected package component disposed in a substrate cavity

A semiconductor package includes a first integrated circuit, a first conductive via, a second conductive via, a second integrated circuit, a third conductive via and an encapsulant. The first conductive via is disposed in a first passivation layer over the first integrated circuit. The second conductive via is disposed in a second passivation layer over the first passivation layer. The second conductive via is electrically connected to the first conductive via. The third conductive via is disposed over the second integrated circuit, wherein a surface of the third conductive via is substantially coplanar with a surface of the third conductive via. The encapsulant encapsulates the first integrated circuit, the first passivation layer, the second passivation layer, the second integrated circuit and the third conductive via.

Semiconductor packages and method of manufacturing the same

A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.

Packages with stacked dies and methods of forming the same

A laminated structure and the manufacturing methods thereof are provided. The structure includes an interconnect substrate having a first surface and a second surface opposite to the first surface, an insulating encapsulant laterally wrapping the interconnect substrate, and a redistribution structure disposed on the first surface of the interconnect substrate and electrically connected with the interconnect substrate. The redistribution structure has a third surface facing the first surface and a fourth surface opposite to the third surface. The redistribution structure includes first pads, second pads located beside the first pads, and protective patterns disposed on the first pads and covering the first pads. The first pads include pad portions protruded from the fourth surface and the protective patterns are in contact with sidewalls and top surfaces of the pad portions of the first pads.

Laminated structure with pads and manufacturing method thereof

A package structure and a manufacturing method thereof are provided. The package structure includes an integrated substrate and a package component. The integrated substrate includes a substrate component laterally covered by an insulating encapsulation, a redistribution structure disposed over the substrate component and the insulating encapsulation, first conductive joints coupling the redistribution structure to the substrate component, and a buffer layer disposed on a lowermost dielectric layer of the redistribution structure and extending downwardly to cover an upper portion of each of the first conductive joints. A lower portion of each of the first conductive joints connected to the upper portion is covered by the insulating encapsulation. The package component disposed over and electrically coupled to the redistribution structure includes a semiconductor die laterally covered by an encapsulant.

Package structure and forming method thereof

A semiconductor package provided herein includes a package substrate and a semiconductor device. The package substrate includes a redistribution structure, an interconnect structure bonded to the interconnect structure and an insulation material laterally surrounding the interconnect structure, wherein the redistribution structure has a reduced structure and the insulation material fills the reduced structure. The semiconductor device is bonded to the package substrate. In addition, a method of fabricating a semiconductor package is also provided and includes a precut process forming the reduced structure in the redistribution structure of the package substrate.

Semiconductor package and methods of fabricating a semiconductor package

A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Semiconductor package

A substrate structure includes a core substrate, a redistribution layer, a plurality of test pads, a first protective coating, at least one conductive pad and a passive device. The redistribution layer is disposed on and electrically connected to the core substrate. The test pads are disposed over the redistribution layer. The first protective coating is coated on the test pads. The conductive pad is d disposed on the redistribution layer aside the plurality of test pads. The passive device is disposed on and electrically connected to the at least one conductive pad.

Probe card substrate, substrate structure and method of fabricating the same

A semiconductor package includes a circuit board structure, a first redistribution layer structure and first bonding elements. The circuit board structure includes outermost first conductive patterns and a first mask layer adjacent to the outermost first conductive patterns. The first redistribution layer structure is disposed over the circuit board structure. The first bonding elements are disposed between and electrically connected to the first redistribution layer structure and the outermost first conductive patterns of the circuit board structure. In some embodiments, at least one of the first bonding elements covers a top and a sidewall of the corresponding outermost first conductive pattern.

Semiconductor packages and methods of forming the same

Multi-die package structures including redistribution layers

A semiconductor package is provided. The semiconductor package includes: semiconductor dies, separated from one another, and including die I/Os at their active sides; and a redistribution structure, disposed at the active sides of the semiconductor dies and connected to the die I/Os, wherein the redistribution structure includes first and second routing layers sequentially arranged along a direction away from the die I/Os, the first routing layer includes a ground plane and first signal lines laterally surrounded by and isolated from the first ground plane, the first signal lines connect to the die I/Os and rout the die I/Os from a central region to a peripheral region of the redistribution structure, the second routing layer includes second signal lines and ground lines, and the second signal lines and the ground lines respectively extend from a location in the peripheral region to another location in the peripheral region through the central region.

Semiconductor package and manufacturing method thereof

An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

Semiconductor packages and methods of forming same

A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Package structure comprising buffer layer for reducing thermal stress and method of forming the same

A semiconductor package includes a semiconductor die, an encapsulant, a first and second dielectric layer, a through via, an extension pad, and a routing via. The semiconductor die includes a contact post. The first dielectric layer extends on the encapsulant. The through via extends through the first dielectric layer and has one end contacting the contact post. The extension pad is disposed on the first dielectric layer, contacting an opposite end of the through via with respect to the contact post. The extension pad has an elongated shape, a first end of the extension pad overlaps with the contact post and the through via, and a second end of the extension pad overlaps with the encapsulant. The second dielectric layer is disposed on the first dielectric layer and the extension pad. The routing via extends through the second dielectric layer to contact the second end of the extension pad.

Semiconductor package with through vias and stacked redistribution layers and manufacturing method thereof

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Tainan, Taiwan

Tsung-Ding Wang