Tokyo Electron Limited

Fujikin Inc.

Ckd Corporation

Other

Horiba Stec, Co., Ltd.

Toyo Tanso Co., Ltd.

Soken-industries

Tsuneyuki Okabe

Michio Yamaji

Shigeyuki Okura

Shuji Moriya

Hitoshi Kato

Tomohiro Nakata

Yuji Kawano

Tsutomu Shinohara

Kazuhiro Yoshikawa

Ken Nakao

Tadayuki Yakushijin

Tsuyoshi Tanikawa

Kohei Fukushima

Keisuke Ishibashi

Hitoshi Kitagawa

Tetsuo Shimizu

Minoru Ito

Hiroki Doi

Kenichi Goshima

Hiroyuki Ebi

Yoji Mori

George Hoshi

Hitoshi Katoh

Hideo Kobayashi

Kenichi Sato

Akinori Nagaya

Ken Ishii

Hiroyuki Kikuchi

Tetsuro Tojo

Hiroshi Itafuji

Seishi Murakami

Akihiro Harada

Takanobu Asano

Toshiyuki Inada

Eiichi Komori

Jiro Hiraiwa

Yasunori Nishimura

Takashi Funakoshi

Osamu Yoshimoto

Hideki Nagaoka

Takashi Yajima

Takashi Chiba

Kengo Kaneko

Hidenori Kiso

Kuniyasu Sakashita

Kohichi Orito

Taiji Chiba

Akihito Sugino

Tatsuhiko Sato

Satoru Koike

Yuji Obata

Hiroshi Hayakawa

Kazuyuki Kikuchi

Yukio Ozawa

Hiroaki Kikuchi

Masahiro Kikuchi

Takeya Inagaki

Junya Hiraka

Kazuo Ujiie

Satoshi Kikuchi

Shinichi Wada

Kazushige Matsuno

Yuya Shindo

A substrate processing apparatus includes a processing chamber configured to process a substrate, and a filtration part containing a porous coordination polymer and provided in an exhaust path configured to exhaust a gas from the processing chamber.

Substrate processing apparatus and substrate processing method

A deposition apparatus includes: a decompressable process container; a showerhead configured to supply a gas in the process container, the showerhead including a lower member having a plurality of gas holes and an upper member that forms, between the upper member and the lower member, a diffusion space that diffuses the gas; a mounting table arranged to face the showerhead and to form a process space between the mounting table and the showerhead; a lifting and lowering mechanism configured to lift and lower the mounting table; a cylindrical section that penetrates the showerhead and communicates with the process space; and a pressure sensor that is airtightly provided in the cylindrical section and configured to measure a pressure in the process space.

Deposition apparatus with pressure sensor and shower head on same plane and deposition method

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

Raw material supply apparatus and raw material supply method

A pipe joint includes first and second sleeves having fluid flow paths communicating with each other; an annular gasket interposed between abutting end surfaces of the sleeves; a male screw member having a through hole into which the first sleeve is inserted; and a female screw member having a through hole into which the second sleeve is inserted, the sleeves being joined by screwing the male screw member with the female screw member, wherein the pipe joint has a leak port opened at a portion of the outer peripheral surface of the male screw member not covered by the female screw member and communicates with a gap between the male screw member and the first sleeve to detect a leak fluid leaked from gaps between the sleeves and the gasket.

Pipe joint

A fluid heater includes: a passage member having a passage formed therein; a heater for heating the passage member; a fixing member for fixing the passage member to a fluid control device; and a connection member connected to the passage member so as to allow fluid to flow into the passage member. The passage has a helical shape.

Fluid heater, fluid control apparatus, and production method for fluid heater

A gasket includes a thick portion providing a first face seal and a thin portion providing a second face seal. A fluid coupling has an annular gasket housing recess that includes a wide portion for housing the thick portion of the gasket and a narrow portion for housing the thin portion of the gasket.

Gasket for fluid coupling, and fluid coupling

A substrate processing apparatus includes an inner tube configured to accommodate a plurality of substrates and having a first opening portion; an outer tube surrounding the inner tube; a movable wall movably provided in the inner tube or between the inner tube and the outer tube and having a second opening portion; a gas supply part configured to supply a processing gas into the inner tube; an exhaust part provided outside the movable wall and configured to exhaust the processing gas supplied into the inner tube through the first opening portion and the second opening portion; and a pressure detection part configured to detect a pressure inside the inner tube.

Substrate processing apparatus

A first on-off valve () and a second on-off valve () each are a two-port valve. A first passage block () is provided with a first on-off valve-corresponding inflow passage () and a first on-off valve-corresponding outflow passage (). A second passage block () is provided with a second on-off valve-corresponding inflow passage () and a second on-off valve-corresponding outflow passage (). The second on-off valve-corresponding outflow passage () is in communication with an upstream side portion of the first on-off valve-corresponding outflow passage () via a communicating passage () formed in the first passage block (). An orifice () is provided between the second on-off valve-corresponding outflow passage () and the communicating passage ().

Shutoff-opening device

A processing apparatus includes a processing container, a manifold having an injector supporting part, the injector supporting part being disposed at a lower end of the processing container, extending along an inner wall surface in the processing container and having an insertion hole, and a gas introduction part having a gas flow passage within the gas introduction part to communicate with the insertion hole and an outside of the processing container so that a gas flows in the gas flow passage, an injector inserted and fixed into the insertion hole, the injector entirely extending in a linear manner along the wall surface and having an opening communicating with the gas flow passage at a location where the injector is inserted into the insertion hole, and a gas supplying pipe communicating with and connected to an outer end of the gas flow passage of the gas introduction part.

Processing apparatus

There is provided a pressure measuring device including: a first pressure gauge connected to a processing chamber configured to process a process target and configured to measure an internal pressure of the processing chamber when the process target is being processed; a second pressure gauge connected to the processing chamber; and a first switching valve configured to disconnect the second pressure gauge from the processing chamber when the process target is being processed inside the processing chamber.

Pressure measuring device and exhaust system using the same, and substrate processing apparatus

A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.

Substrate processing apparatus, gas supply method, substrate processing method, and film forming method

A pipe joint for preventing fine particles generated when a male threaded member and a female threaded member are threadedly engaged with each other from entering a fluid passage thus maintaining a high degree of cleanliness. Joint members are joined to each other by a male threaded member formed on one joint member and a female threaded member formed on the other joint member. A cover portion which covers outer peripheral surfaces of abutting portions of both joint members is formed on the male threaded member.

A pipe joint includes first and second joint members having fluid channels communicating with each other, an annular gasket to be interposed between abutting end surfaces of the both joint members, and a nut configured to couple the joint members. The nut is provided with an inner surface treated layer. The inner surface treated layer includes a Co (cobalt)-P (phosphorous) alloy metal coating provided on an inner surface of the nut and a fluorine coating provided on the surface of the alloy metal coating.

A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value.

Semiconductor processing system including vaporizer and method for using same

Railscorresponding to lines A, B, C are provided in parallel on a bass plate, and coupling membersare slidably mounted on each of the rails. Each of fluid controllersis mounted generally on two of these coupling members

Fluid control device

Growing community of inventors

Oshu, Japan

Tsuneyuki Okabe