Ebara Corporation

Tsuneo Torikoshi

Takamasa Nakamura

Kuniaki Yamaguchi

Hirofumi Otaki

Akira Nakamura

Hozumi Yasuda

Koichi Takeda

Yuta Suzuki

Katsuhide Watanabe

Hisanori Matsuo

Yu Ishii

Kunio Oishi

Mitsunori Sugiyama

Takahito Kagoshima

A local polishing system comprises: a particle estimation unit () for estimating the film thickness distribution of a wafer; a local polishing region setting unit () for setting a local polishing region on the wafer based on the film thickness distribution; a polishing head selection unit () for selecting a polishing head based on the size of the local polishing region; a model storage () holding a recipe generating model that defines the relation between an input node and an output node, the input node being an attribute of the local polishing region, the output node comprising a recipe for a polishing process; a polishing recipe generator () that puts an attribute of the local polishing region set by the local polishing region setting unit () into the input node of the recipe generating model and determines a polishing recipe for polishing the local polishing region; and a polishing recipe transmitter () for transmitting data of the polishing recipe to a local polishing module () that performs local polishing.

Substrate processing control system, substrate processing control method, and program

A polishing apparatus that is capable of referring to a storage in which a machine learning model is stored, the machine learning model being learned using learning data in which a feature amount of a signal regarding a frictional force between a polishing member and a substrate in polishing or a feature amount of a temperature of the polishing member or the substrate in polishing is input, and data regarding a film thickness of the polished substrate or a parameter related to yield of a product included in the polished substrate is output, the device including: a polishing table provided with the polishing member and configured to be rotatable; a polishing head facing the polishing table and configured to be rotatable, wherein the substrate is attachable to a surface facing the polishing table; a control unit configured to perform control to polish the substrate by pressing the substrate against the polishing member while rotating the polishing table and the polishing head having the substrate attached thereto; and a processor configured to generate the feature amount from the signal regarding the frictional force between the polishing member and the substrate in polishing or the feature amount from the temperature of the polishing member or a target substrate in polishing, and output the data regarding the film thickness of the polished substrate or any of the parameters related to the yield of the product included in the polished substrate, as an estimated value, by inputting the generated feature amount to the learned machine learning model.

Polishing apparatus, information processing system, polishing method, and computer-readable storage medium

A non-transitory computer-readable storage medium storing a program of screen control capable of improving the user-friendliness with respect to a semiconductor manufacturing apparatus is disclosed. The program of screen control causes a computer to perform operation of: judging whether or not a vertical screen resolution of a display screen is larger than a horizontal screen resolution of the display screen; and dividing a display area of the display screen into a main screen display area for displaying a monitoring image with respect to an operational status of a processing unit and a work area for displaying an operation image with respect to an operation of the processing unit when the vertical screen resolution is larger than the horizontal screen resolution.

Non-transitory computer-readable storage medium storing a program of screen control and semiconductor manufacturing apparatus

A polishing method is used for polishing a surface of a substrate such as a semiconductor wafer. The polishing method includes a polishing process for polishing a surface of the substrate in accordance with a preset polishing recipe, a pad cleaning process for removing foreign matters on the polishing pad by ejecting a cleaning fluid onto the polishing pad, and a substrate transferring process in which the polished substrate is removed from the top ring at a substrate transferring position, a subsequent substrate to be polished is loaded onto the top ring, and then the top ring holding the subsequent substrate to be polished is returned to the polishing table. The pad cleaning process is started after the completion of the polishing recipe is detected, and the pad cleaning process is terminated by detecting a position of the subsequent substrate to be polished which is undergoing the substrate transferring process.

Polishing method and apparatus

Display screen with animated graphic user interface

Display screen with graphical user interface

Display screen with animated graphical user interface

A substrate processing method which can increase the yield by reprocessing a substrate whose processing has been interrupted by a processing interruption command during a substrate processing is disclosed. A substrate processing method performs a predetermined processing of a substrate while sequentially transporting the substrate to a plurality of processing sections according to a preset recipe. The substrate processing method includes processing a substrate in one of the processing sections; interrupting the processing of the substrate by a processing interruption command during processing of the substrate; setting the substrate whose processing has been interrupted in a standby state; and customizing the recipe and performing reprocessing of the processing-interrupted substrate according to the customized recipe, or performing reprocessing of the processing-interrupted substrate according to a preset recipe for reprocessing.

Substrate processing method including reprocessing rejected wafers

A polishing method and a polishing apparatus for performing a measurement of a film thickness of a substrate, such as a wafer, if an error has occurred during polishing of the substrate. The polishing method includes polishing a plurality of substrates, measuring a film thickness of at least one substrate, which has been designated in advance, of the plurality of substrates that have been polished, and if a polishing error has occurred during polishing of any one of the plurality of substrates, measuring a film thickness of that substrate.

Polishing method and polishing apparatus

A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput. The polishing method for polishing workpieces by repeating the sequential operations of taking a workpiece out of a cassette in which a plurality of workpieces are stored, carrying out multi-step polishing of a surface of the workpiece and returning the workpiece to the cassette, includes carrying out one of the following two polishing processes for the workpiece taken out of the cassette: a first polishing process comprising carrying out the multi-step polishing under preset conditions and measurement of the surface of the workpiece before and after each polishing step; and a second polishing process comprising carrying out a predetermined step of the multi-step polishing under polishing conditions which have been modified based on the results of the measurement.

A polishing method can bring a polishing surface to the optimum condition for polishing, without using a dummy wafer, before resuming polishing, thereby eliminating the cost of dummy wafer. The polishing method includes carrying out a stand-by operation during a polishing-resting time period, carrying out a preparatory process to polishing, after completion of the stand-by operation, by dressing a polishing surface while supplying a polishing liquid to the polishing surface, and starting polishing of a workpiece after completion of the preparatory process to polishing. A determination as to whether to carry out the preparatory process to polishing after completion of the stand-by operation may be made based on the total operating time of the stand-by operation or the total effective number of the stand-by operations.

Polishing method and polishing apparatus, and program for controlling polishing apparatus

A polishing method includes: a pre-polishing film thickness measurement step of taking a substrate before polishing out of a cassette and measuring a thickness of a polishing film of the substrate with a film thickness measurement device; the pre-polishing substrate withdrawal step of returning the substrate after the pre-polishing film thickness measurement to the cassette; the polishing step of taking the substrate, which has been returned to the cassette, out of the cassette and polishing the substrate; the cleaning/drying step of cleaning and drying the substrate after polishing; the post-polishing substrate withdrawal step of returning the substrate after cleaning/drying to the cassette; and the post-polishing film thickness measurement step of taking the substrate after cleaning/drying, which has been returned to the cassette, out of the cassette and measuring the thickness of the polishing film of the substrate with the film thickness measurement device.

Polishing method, polishing apparatus, and program for controlling polishing apparatus

A polishing method enables to initiation a second polishing step of a workpiece with an optimal thickness of an uppermost-layer film to be polished. The polishing method comprises: measuring a thickness of an uppermost-layer film, and then carrying out a first polishing step to polish the uppermost-layer film partway and a second polishing step to polish the remaining uppermost-layer film and a next-layer film; determining the polishing rates of the uppermost-layer film in the first and second polishing steps; and measuring a thickness of an uppermost-layer film of a predetermined nth workpiece and setting a processing time for the first polishing step of the nth workpiece or a next predetermined nth workpiece.

Growing community of inventors

Tokyo, Japan

Tsuneo Torikoshi