Hitachi High-Tech Corporation

Hitachi-High-Technologies Corporation

Japan Fine Ceramics Center

Tsunenori Nomaguchi

Toshihide Agemura

Shunichi Motomura

Junichi Katane

Ryo Hirano

Takeharu Kato

Tadahiro Kawasaki

Ryuji Yoshida

Hideo Morishita

Hiroyuki Chiba

Chisato Kamiya

Kenichi Nishinaka

Yudai Kubo

Takahiro Sato

Yoichi Ose

Takashi Ohshima

Masatoshi Yasutake

Tomihiro Hashizume

Shinsuke Kawanishi

Takafumi Miwa

Yuta Imai

Hiromi Mise

Tatsuro Ide

Yaku Maeda

Atsushi Sawada

Naoki Samura

Kazuo Ootsuga

A semiconductor analysis system includes a machining device that machines a semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, and outputs the updated acquisition conditions to the transmission electron microscope device

Semiconductor analysis system

Tweezers, which can grip a sample piece, includes a gripping memberand a gripping member. The gripping memberincludes a gripping regionand an abutment region, and the gripping memberincludes a gripping regionand an abutment region. The gripping regionand the gripping regioninclude a gripping surface SFand a gripping surface SFfor gripping the sample piece, respectively. The abutment regionprotrudes from the gripping regionin a direction directed from the gripping surface SFto the gripping surface SF, and the abutment regionprotrudes from the gripping regionin a direction directed from the gripping surface SFto the gripping surface SF

Tweezers, conveyance device, and method for conveying sample piece

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

A lamellaincluding an analysis portionand a cutout portionseparated from the analysis portionis produced. When a plurality of the lamellaeare transported to a lamella grid, the plurality of lamellaeare supported by a support portionprotruding from a surface of a substrate, and are mounted adjacent to each other in a Z direction. At this time, the cutout portionprevents the analysis portionfrom damage.

Method for producing lamella, analysis system and method for analyzing sample

Provided is a charged particle beam device capable of stably obtaining an effect of improving the depth of focus or the effect of correcting spherical aberration. The charged particle beam device includes an aperture having an annular slit or an electrode having an annular slit and is provided with means for adjusting the incident angle at which the charged particle beam is incident on the aperture or the electrode. Since the incident angle at which the charged particle beam is incident on the aperture or electrode having an annular slit can be made closer to perpendicular, the effect of improving the depth of focus or the effect of correcting spherical aberration can be stably obtained.

Mechanism for adjusting angle of incidence on charged particle beam aperture, and charged particle beam device

As a device for correcting positive spherical aberration of an electromagnetic lens for a charged particle beam, a spherical aberration correction device combining a hole electrode and a ring electrode is known. In this spherical aberration correction device, when a voltage is applied between the hole electrode and the ring electrode, the focus of the charged particle beam device changes due to the convex lens effect generated in the hole electrode. Therefore, in a charged particle beam device including a charged particle beam source which generates a charged particle beam, a charged particle beam aperture having a ring shape, and a charged particle beam aperture power supply which applies a voltage to the charged particle beam aperture, the charged particle beam aperture power supply is configured to apply, to the charged particle beam aperture, a voltage having a polarity opposite to a polarity of charges of the charged particle beam.

Charged particle beam device

Provided is a charged particle beam apparatus capable of stably obtaining a spherical aberration correction effect. The charged particle beam apparatus includes: a charged particle beam aperture stopand an electrodethat are arranged on an optical axis between the charged particle beam sourceand the objective lens; and a power supplythat applies a voltage between the charged particle beam aperture stopand the electrode, in which the voltage that is applied from the electrode to the charged particle beam aperture stop by the power supply is a voltage having a polarity opposite to a charge of the charged particle beam, the electrodeincludes an annular aperture, and the charged particle beam aperture stopincludes a plurality of aperturesthat are arranged at positions overlapping the annular apertureof the electrodewhen viewed in a direction Z along the optical axis.

Charged particle beam apparatus

A scanning electron beam apparatus which two-dimensionally scans a sample by an electron beam to achieve high resolution even with a photoexcited electron source. The electron beam apparatus includes a photocathode including a substrate having a refractive index of more than 1.7 and a photoemissive film, a focusing lens configured to focus an excitation light toward the photocathode, an extractor electrode disposed facing the photocathode and configured to accelerate an electron beam generated from the photoemissive film by focusing the excitation light by the focusing lens and emitting the excitation light through the substrate, and an electron optics including a deflector configured to two-dimensionally scan a sample by the electron beam accelerated by the extractor electrode. For a spherical aberration of the focusing lens, a root mean square of the spherical aberration on the photoemissive film is equal to or less than 1/14 of a wavelength of the excitation light.

Electron beam apparatus

The present invention provides a charged particle beam apparatus capable of efficiently reducing the effect of a residual magnetic field when SEM observation is performed. The charged particle beam apparatus according to the present invention includes a first mode for passing a direct current to a second coil after turning off a first coil, and a second mode for passing an alternating current to the second coil after turning off the first coil.

The present invention realizes a composite charged particle beam apparatus capable of suppressing a leakage magnetic field from a pole piece forming an objective lens of an SEM with a simple structure. The charged particle beam apparatus according to the present invention obtains an ion beam observation image while passing a current to a first coil constituting the objective lens, and performs an operation of reducing the image shift by passing a current to a second coil with a plurality of current values, and determines a current to be passed to the second coil based on a difference between the operations.

To provide, in observation of a sample that requires a movement between various devices, a charged particle beam device, a method for processing the sample, and an observation method which facilitate the movement between the devices. The charged particle beam device that processes an observation target on the sample using a charged particle beam includes: a sample stage on which the sample is placed; an observation unit configured to observe the observation target; and a writing unit configured to write information of the observation target in a writing position of the sample.

Charged particle beam device, method for processing sample, and observation method

A charged particle beam device includes: a charged particle beam source configured to generate a charged particle beam with which a sample is irradiated; a charged particle detection unit configured to detect a charged particle generated when the sample is irradiated with the charged particle beam; an intensity data generation unit configured to generate intensity data of the charged particle detected by the charged particle detection unit; a pulse-height value data generation unit configured to generate pulse-height value data of the charged particle detected by the charged particle detection unit; and an output unit configured to output a first image of the sample based on the intensity data and a second image of the sample based on the pulse-height value data.

When a charged particle beam aperture having an annular shape is used, since a charged particle beam directly above the optical axis having the highest current density in the charged particle beam is blocked, it is difficult to dispose the charged particle beam aperture at an optimal mounting position. An charged particle beam apparatus includes a charged particle beam source that generates a charged particle beam, a charged particle beam aperture, a charged particle beam aperture power supply that applies a voltage to the charged particle beam aperture, an objective lens for focusing the charged particle beam on a sample, a detector that detects secondary charged particles emitted by irradiating the sample with the charged particle beam, a computer that forms a charged particle beam image based on the secondary charged particles detected by the detector, in which the position of the charged particle beam aperture is set so that the charged particle beam image does not move and changes concentrically in synchronization with the AC voltage, in a state where an AC voltage is applied to the charged particle beam aperture by the charged particle beam aperture power supply.

When using a charged particle beam aperture having a ring shape in a charged particle beam device, the charged particle beam with the highest current density immediately above the optical axis, among the charged particle beams is blocked, so that it is difficult to dispose the charged particle beam aperture at the optimal mounting position. Therefore, in addition to the ring-shaped charged particle beam aperture, a hole-shaped charged particle beam aperture is provided, and it is possible to switch between the case where the ring-shaped charged particle beam aperture is disposed on the optical axis of the charged particle beam and the case where the hole-shaped charged particle beam aperture is disposed on the optical axis of the charged particle beam.

Growing community of inventors

Tokyo, Japan

Tsunenori Nomaguchi