Shin-etsu Chemical Co., Ltd.

Nippon Telegraph and Telephone Corporation

Eudyna Devices Inc.

Tsunehiro Nishi

Takeshi Kinsho

Koji Hasegawa

Jun Hatakeyama

Takeru Watanabe

Mutsuo Nakashima

Seiichiro Tachibana

Tomohiro Kobayashi

Shigehiro Nagura

Satoshi Watanabe

Katsuhiro Kobayashi

Osamu Watanabe

Toshinobu Ishihara

Katsuya Takemura

Masashi Iio

Masaki Ohashi

Youichi Ohsawa

Kenji Funatsu

Kazuhiro Katayama

Yoshio Kawai

Jun Watanabe

Takanobu Takeda

Ryosuke Taniguchi

Hideshi Kurihara

Takeshi Nagata

Akihiro Seki

Satoshi Shinachi

Shigeo Tanaka

Masayoshi Sagehashi

Tatsushi Kaneko

Akinobu Tanaka

Junji Tsuchiya

Takesi Nagata

A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein Ris H, CHor CF, Ris an acid labile group, Ris H or COCH, X is O, S, CHor CHCH, 0.01&#x2266;a&#x3c;1 and 0.01&#x2266;b&#x3c;1. When processed by ArF lithography, the composition forms a pattern with a satisfactory mask fidelity and a minimal LWR. 

Positive resist compositions and patterning process

A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.

Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition

A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.

Resist-modifying composition and pattern forming process

An acetal compound of formula (1) is provided wherein Ris H, methyl or trifluoromethyl, Ris a monovalent C-Chydrocarbon group, Rand Rare H or a monovalent C-Chydrocarbon group, Rand Rmay together form an aliphatic hydrocarbon ring, and Xis a single bond or a divalent C-Chydrocarbon group. A polymer comprising recurring units derived from the acetal compound is used as a base resin to formulate a resist composition which exhibits a high resolution when processed by micropatterning technology, especially ArF lithography. 

Acetal compounds and their preparation, polymers, resist compositions and patterning process

A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50&#xb0;-85&#xb0;.

Pattern forming process and resist-modifying composition

A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein Ais alkylene, Ris H or methyl, Ris alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent. 

A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein Ris H, CHor CF, m=1 or 2, n=0 or 1. 

Double patterning process

Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.

Carboxyl-containing lactone compounds having formula (1) are novel wherein Ris H, F, methyl or trifluoromethyl, Rand Rare H or monovalent hydrocarbon groups, or Rand Rmay together form an aliphatic ring, W is CH, O or S, kis an integer of 0 to 4, and kis 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation&#x2266;500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin. 

Carboxyl-containing lactone compound, polymer, resist composition, and patterning process

A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein Ris H, methyl or trifluoromethyl, m is 1 or 2, and the hydroxyl group attaches to a tertiary carbon atom. The composition is improved in resolution when processed by lithography. 

Positive resist composition and patterning process

Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions. Ris H or monovalent C-Chydrocarbon group, Ris H, F, methyl or trifluoromethyl, Rand Rare H or a monovalent C-Chydrocarbon group, or Rand Rmay form an aliphatic hydrocarbon ring, and A is a divalent C-Chydrocarbon group 

Fluorinated monomer, fluorinated polymer, resist composition and patterning process

Lactone-containing compounds having formula (1) are novel wherein Ris H, F, methyl or trifluoromethyl, Rand Rare monovalent hydrocarbon groups, or Rand Rmay together form an aliphatic hydrocarbon ring, Ris H or COR, Ris a monovalent hydrocarbon group, W is CH, O or S, and kis 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation&#x2266;500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, pattern edge roughness, pattern density dependency and exposure margin. 

Lactone-containing compound, polymer, resist composition, and patterning process

Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein Ris H or a monovalent C-Chydrocarbon group in which any &#x2014;CH&#x2014; moiety may be replaced by &#x2014;O&#x2014; or &#x2014;C(&#x2550;O)&#x2014;, Ris H or a monovalent C-Chydrocarbon group, Rand Rare H or a monovalent C-Chydrocarbon group, and Mis Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions. 

Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process

Lactone-containing compounds having formula (1) are novel wherein Ris H, F, methyl or trifluoromethyl, Rand Rare H or monovalent hydrocarbon groups, or Rand Rmay together form an aliphatic hydrocarbon ring, Ris H or COR, Ris a monovalent hydrocarbon group, W is CH, O or S, and kis 3, 4 or 5. They are useful as monomers to produce polymers which are transparent to radiation &#x2266;500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin. 

A novel lactone-containing compound is provided as well as a polymer comprising units of the compound. The polymer is used as a base resin to formulate a resist composition having a high sensitivity, resolution and etching resistance.

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Joetsu, Japan

Tsunehiro Nishi