Tokyo Electron Limited

Tsukasa Hirayama

Takao Inada

Hiroshi Tanaka

Koji Yamashita

Satoru Tanaka

Naoki Shindo

Nobuhiro Ogata

Hideaki Sato

Koji Tanaka

Teruomi Minami

Hisashi Kawano

Hitoshi Kosugi

Taku Gohira

Hironobu Hyakutake

Yosuke Kawabuchi

Hiromi Kiyose

Takashi Nagai

Hiromi Hara

Kotaro Tsurusaki

Hiroshi Yoshida

Kazuya Koyama

Hiroyuki Suzuki

Toshiyuki Shiokawa

Hiroyuki Masutomi

Tatsuya Nagamatsu

Takashi Ikeda

Hidetsugu Yano

Katsufumi Matsuki

Hidetoshi Nakao

Atushi Yamashita

A substrate processing method includes: (a) providing a substrate including an etching target film and a mask formed on the etching target film and having an opening; (b) forming a first layer containing a nitrogen atom and a hydrogen atom by using a first processing gas, on a side wall of a recess that is formed in the etching target film corresponding to the opening; (c) after (b), modifying the first layer into a second layer by using a second processing gas containing a halogen-containing gas; and (d) after (c), etching the recess by using a third processing gas.

Substrate processing method and substrate processing apparatus

A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

Substrate liquid treatment apparatus

An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

A substrate liquid processing apparatus includes a processing tubA which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrateis performed by immersing the substrate in the stored processing liquid; a concentration sensorB configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit() configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensorB configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unitconfigured to correct, based on a detection value of the head pressure sensor, the set concentration.

Substrate liquid processing apparatus

A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.

Substrate liquid processing apparatus, substrate liquid processing method, and storage medium

The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.

Liquid processing apparatus with cleaning jig

A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.

Substrate processing method, storage medium storing computer program for implementing substrate processing method and substrate processing apparatus

The present invention provides a drying apparatus capable of satisfactorily drying a workpiece by using a dry vapor The drying apparatus has a control device for controlling a supply of a carrier gas and a supply of a dry vapor into a processing tank holding workpieces. A drying process carries out a carrier gas supply step of supplying the carrier gas and a mixed fluid supply step of supplying a mixed fluid prepared by mixing the carrier gas and the dry vapor alternately. A total mixed fluid supply time for which the mixed fluid supply step is executed is not shorter than 57% of a total processing time for which the carrier gas supply step and the mixed fluid supply step are executed.

Substrate drying processing apparatus, method, and program recording medium

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Koshi, Japan

Tsukasa Hirayama