Nissin Electric Co., Ltd.

Sumitomo Electric Industries, Limited

Emd Corporation

Tsukasa Hayashi

Kiyoshi Ogata

Koji Miyake

Hajime Kuwahara

Eiji Takahashi

Takashi Mikami

Hiroshige Deguchi

Atsushi Tomyo

Kenji Kato

Hiromi Nakanishi

Yoshiki Nishibayashi

Natsuo Tatsumi

Shigeki Sakai

Yuichi Setsuhara

Shigeaki Kishida

A diamond magneto-optical sensor includes: a diamond including a color center with an electronic spin, a transmission circuit that transmits electromagnetic waves, and an irradiation unit that irradiates the diamond with electromagnetic waves transmitted by the transmission circuit, wherein the transmission circuit includes an impedance converter that reduces or increases, with respect to the irradiation unit, the impedance of an electromagnetic source for outputting electromagnetic waves.

Diamond magneto-optical sensor

A diamond sensor unit includes: a diamond having a color center with electron spin; an excitation light irradiation part that irradiates the diamond with excitation light; a first patch antenna that receives electromagnetic waves; an electromagnetic wave irradiation part that irradiates the diamond with the electromagnetic waves received by the first patch antenna; a detection part that detects radiated light radiated from the color center of the diamond after the diamond is irradiated with the excitation light and the electromagnetic waves; and an optical waveguide that transmits the excitation light and the radiated light.

Diamond sensor unit

There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber () provided with a silicon sputter target (e.g., target), or the hydrogen gas and the silane-containing gas are supplied into the chamber () without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H&#x3b2;) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H&#x3b2; of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

Silicon dot forming method and silicon dot forming apparatus

A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

Silicon object forming method and apparatus

A method for implanting negative hydrogen ions includes the following steps. Plasma containing hydrogen is generated. Negative hydrogen ions are generated in the plasma. An electric field is formed between the plasma and a substrate. Negative hydrogen ions from the plasma is accelerated by using the electric field so as to implant negative hydrogen ions into a predetermined depth of a substrate.

Method for implanting negative hydrogen ion and implanting apparatus

A vaporizing apparatus has a vaporizing container into which a liquid raw material is introduced and which is made of metal, a heater for heating the vaporizing container to vaporize liquid introduced into the vaporizing container and a metal nozzle (an electrode) disposed in the vaporizing container in such a manner that the nozzle is electrically insulated from the vaporizing container. Moreover, the vaporizing apparatus has a cleaning-solution supply apparatus for supplying, to the inside portion of the vaporizing container, a cleaning solution for solving residues generated in the vaporizing container and a plasma generating power source for supplying high-frequency electric power to a position between the nozzle and the vaporizing container to generate plasma in the vaporizing container by using the vaporized cleaning solution.

Apparatus for vaporizing liquid raw material and method of cleaning CVD apparatus

A method of forming a highly insulative silicon oxide thin film including the steps of providing a substrate, depositing silicon on the substrate, and injecting an ion beam of oxygen or a mixed gas consisting of oxygen and an inert gas simultaneously or alternately with the depositing of the silicon. Silicon oxide may be deposited on the substrate in combination with the injection of ions of an inert gas. Other metals made be deposited along with the injection of oxygen or nitrogen cations.

Growing community of inventors

Kyoto, Japan

Tsukasa Hayashi