Disco Corporation

Tsubasa Obata

Yuki Ogawa

Yohei Yamashita

Yuri Ban

Kensuke Nagaoka

Yuki Ishida

Satoshi Kumazawa

A laser processing apparatus includes a laser oscillator configured to emit a laser beam, a slit configured to narrow a width of the laser beam emitted from the laser oscillator to a width corresponding to a dividing groove to form the dividing groove of a predetermined width, a slit moving mechanism configured to move the slit in a direction corresponding to a width direction of the dividing groove, and an adjusting unit configured to make the center of the slit and the cross-sectional center of the laser beam entering the slit coincide with each other in a direction in which the slit moving mechanism moves the slit.

Laser processing apparatus

A wafer processing method includes a protective member laying step of placing a protective member on a face side of a wafer, a reverse side grinding step of grinding a reverse side of the wafer to thin the wafer, a cut groove forming step of positioning a cutting blade in alignment with projected dicing lines one at a time on the reverse side of the wafer, cutting the wafer with the cutting blade to form cut grooves in the wafer which terminate short of the face side thereof, and a cutting step of applying a laser beam to the wafer from the reverse side thereof along the cut grooves to completely sever the wafer along the projected dicing lines into individual device chips.

Method of dicing a wafer by pre-sawing and subsequent laser cutting

A processing method for a plate-shaped workpiece that has a transparent substrate, a first resin layer stacked on a front surface of the substrate, and a second resin layer stacked on a back surface of the substrate and in which the first resin layer is segmented into plural regions by plural planned dividing lines that intersect each other, includes sticking an expandable adhesive tape to the second resin layer, irradiating the workpiece with a laser beam with such a wavelength as to be absorbed by the first resin layer and transmitted through the transparent substrate, the laser beam removing the first resin layer along the planned dividing lines by ablation, the laser beam also forming a modified layer whose refractive index or mechanical strength is different from surroundings along the planned dividing lines.

Workpiece processing method

A wafer dividing method includes a first step of cutting a back side of the wafer by using a cutting blade thereby forming a cut groove on the back side of the wafer along each division line, such that each cut groove has a depth not reaching the front side of the wafer from the back side thereof. A second step includes supplying a water-soluble liquid resin to the back side of the wafer thereby forming a water-soluble protective film on the back side of the wafer. A third step includes positioning a focal point of a laser beam on the bottom surface of each cut groove and next applying the laser beam to the bottom surface of each cut groove thereby fully cutting the wafer along each cut groove.

Backside wafer dividing method using water-soluble protective film

In a method of manufacturing a glass interposer, first, stacked bodies formed on a front surface and a back surface of a glass substrate are processed along division lines (streets) to form first grooves having a first width and such a depth as not to reach the glass substrate, while leaving a residual resin portion at bottoms of the first grooves. Thereafter, the residual resin portion is subjected to ablation processing to expose the front surface and the back surface of the glass substrate, thereby forming second grooves having a second width narrower than the first width. A laser beam is applied along the division lines through the second grooves to form modified layers in the inside of the glass substrate, and an external force is exerted on the glass substrate to divide the glass substrate, with the modified layers as division starting points.

Method of manufacturing glass interposer

A wafer processing method divides a wafer into individual device chips along division lines. The method includes attaching an adhesive tape to the front side of the wafer and attaching a peripheral portion of the adhesive tape to an annular frame having an inside opening for receiving the wafer, thereby supporting the wafer through the adhesive tape to the annular frame; grinding the back side of the wafer to reduce the thickness of the wafer; cutting the back side of the wafer along each division line by using a cutting blade to form a cut groove having a depth not reaching the front side of the wafer; and applying a laser beam to the bottom of the cut groove from the back side of the wafer along each division line to divide the wafer to obtain the individual device chips.

Wafer processing method

A laser beam is applied to the front side of a wafer along division lines, to form grooves having a depth corresponding to a finished thickness of device chips. Molding resin is laid on the front side of the wafer and embedded in the grooves. A protective member is attached to a front side of the molding resin, and a back side of the wafer is ground to expose the grooves and to expose the molding resin embedded in the grooves on the back side of the wafer. The wafer is divided along the grooves by a cutting blade having a thickness smaller than the width of the grooves, a central portion in a width direction of the molding resin being exposed along the grooves, thereby dividing the wafer into individual device chips each having a periphery surrounded with the molding resin.

A method for dividing a wafer including: attaching a protective tape to a functional layer of the wafer with the adhesive layer of the tape in contact with the functional layer; and a wafer dividing step. The dividing step includes a cut groove forming step and a laser processing step. The cut groove forming step uses a blade to form a cut groove with a depth that does not reach the functional layer, resulting in part of the substrate being left along each division line. The laser processing step includes applying a laser beam to the part of the substrate left after the cut groove forming step and the functional layer of the wafer to form a laser processed groove having a depth reaching the tape. The tape is closely attached to the functional layer during the tape attaching step to prevent the adhesion of debris to the devices.

Wafer processing method including attaching a protective tape to a front side of a functional layer to prevent debris adhesion

A wafer having a substrate and a functional layer formed on the front side of the substrate is processed by attaching a protective tape curable by an external stimulation to the front side of the functional layer. The substrate is cut from the back side along each division line by using a cutting blade, thereby forming a cut groove having a depth not reaching the functional layer, with a part of the substrate left between the bottom of the cut groove and the functional layer. A laser beam is applied along the cut groove, thereby dividing the remaining part of the substrate to divide the wafer into device chips. When the groove is formed, an uncut portion in which the cut groove is not formed is left in a peripheral marginal area of the wafer.

A wafer processing method for dividing a wafer (including a substrate and a functional layer formed on the front side of the substrate) along a plurality of division lines. The functional layer is partitioned by the division lines to define a plurality of regions. The method includes the following steps: attaching a protective member to the front side of the wafer; cutting the back side of the substrate of the wafer in an area corresponding to each division line with a cutting blade, thereby forming a division groove having a depth not reaching the functional layer so that a part of the substrate is left in this area; applying a laser beam to the wafer from the back side of the substrate along the bottom of each division groove extending along each division line to thereby cut the part of the substrate and the functional layer along each division line.

Disclosed herein is a wafer processing method for dividing a wafer into a plurality of individual devices along a plurality of crossing division lines. The wafer is composed of a substrate and a functional layer formed on the front side of the substrate. The division lines are formed on the front side of the functional layer. A laser beam having a transmission wavelength to the substrate is applied to the wafer from the back side thereof to detect the height of an interface between the functional layer and the substrate in an area corresponding to each division line. The depth of cut by a cutting blade for cutting the substrate is next set according to the height detected above. The back side of the substrate is next cut by the cutting blade according to the depth of cut set above to thereby form a cut groove having a depth not reaching the functional layer with a remaining part of the substrate left between the bottom of the cut groove and the functional layer along each division line, the remaining part having a uniform thickness. Thereafter, the remaining part and the functional layer are cut along each division line to thereby divide the wafer.

A plate-like object processing method for processing a plate-like object including a substrate and a laminate formed on a front surface of the substrate, includes a substrate exposing step of exposing the substrate by removing the laminate by irradiating a region in which the laminate of the plate-like object is desired to be removed with a laser beam set at an energy density that destroys the laminate but does not destroy the substrate.

Plate-like object processing method

A wafer has a substrate, a functional layer and division lines. The wafer is held on a chuck table with a protective member attached to the front side of the functional layer in contact with the chuck table. The height of the back side of the wafer is detected in a Z direction along each division line while moving the chuck table in an X direction. An X coordinate is recorded for each division line, as well as a corresponding Z coordinate. A cutting blade is positioned on the back side of the wafer and moved in the Z direction according to the recorded X and Z coordinates while moving the chuck table in the X direction to thereby form a cut groove having a depth not reaching the functional layer, with a part of the substrate left between the bottom of the cut groove and the functional layer.

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Tokyo, Japan

Tsubasa Obata