Jsr Corporation

Nippon Chemi-con Corporation

Tsubasa Abe

Goji Wakamatsu

Naoya Nosaka

Kazunori Sakai

Yuushi Matsumura

Shin-ya Nakafuji

Yoshio Takimoto

Masayuki Miyake

Hiroki Nakagawa

Hayato Namai

Gouji Wakamatsu

Kazunori Takanashi

Ikufumi Honda

Hiroki Nakatsu

Ichihiro Miura

Kengo Ehara

Nobukatsu Abe

Mitsuru Kurosu

Yuya Tamai

Osamu Ichikura

A composition for resist underlayer film formation, includes a first compound and a solvent. The first compound includes a first group represented by formula (1) and a partial structure comprising an aromatic ring. In the formula (1), Rrepresents a single bond or an oxygen atom, Rrepresents a divalent chain or alicyclic hydrocarbon group having 1 to 30 carbon atoms, and * denotes a bonding site to a moiety other than the first group of the first compound.*&#x2014;R&#x2014;R&#x2014;CN&#x2003;&#x2003;(1)

Composition for resist underlayer film formation, resist underlayer film and method for producing patterned substrate

A composition for resist underlayer film formation contains: a compound having a partial structure represented by the following formula (1); and a solvent. In the formula (1): X represents a group represented by formula (i), (ii), (iii) or (iv). In the formula (i): Rand Reach independently represent a hydrogen atom, a substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or a substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms provided that at least one of Rand Rrepresents the substituted or unsubstituted monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or the substituted or unsubstituted aralkyl group having 7 to 20 carbon atoms; or Rand Rtaken together represent a part of a ring structure having 3 to 20 ring atoms together with the carbon atom to which Rand Rbond. 

Composition for resist underlayer film formation, resist underlayer film and formation method thereof, and patterned substrate production method

A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. Rrepresents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; Lrepresents an ethynediyl group or a substituted or unsubstituted ethenediyl group; Rrepresents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3. 

Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound

The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), Rto Reach independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or Rto Rtaken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which Rto Rbond. Arrepresents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. Rrepresents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms. 

Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound

A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156&#xb0; C., and a second solvent having a normal boiling point of no less than 156&#xb0; C. and less than 300&#xb0; C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.

Resist underlayer film-forming composition, resist underlayer film, resist underlayer film-forming process, and production method of patterned substrate

A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. Xand Xeach independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. Rand Reach independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8. 

Composition for film formation, film, production method of patterned substrate, and compound

A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450&#xb0; C. and 800&#xb0; C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500&#xb0; C. or higher and 600&#xb0; C. or lower.

Method for film formation, and pattern-forming method

A composition comprises: a compound having one partial structure represented by formula (1), and a solvent. n1 and n2 are each independently an integer of 0 to 2; and k1 and k2 are each independently an integer of 0 to 9. The compound preferably has an intermolecular bond-forming group. The compound is preferably represented by formula (2). Z represents the partial structure represented by the formula (1); Arand Arrepresent a substituted or unsubstituted arenediyl group having 6 to 20 carbon atoms; Arand Arrepresent a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and p1 and p2 are each independently an integer of 0 to 3.  

An object of the invention is to provide a capacitor device that can be made slimmer and lighter and that enables the strength and heat dissipation properties to be improved. A capacitor device () has a plurality of capacitor units () integrally housed within a housing case (), the housing case () having cylindrical housing sections () for housing the capacitor bodies. The housing sections () are longitudinally aligned in the same direction and are joined together as an integrated whole. A capacitor unit () is inserted via an opening () at one end of each of the housing sections () so that the entire circumference of the capacitor unit () is covered by the corresponding housing section (). The housing sections () have a uniform thickness at least on the outer side along the outer periphery of the capacitor units.

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Tokyo, Japan

Tsubasa Abe