Mattson Technology, Inc

Beijing E-town Semiconductor Technology, Co., Ltd

Tsai Wen Sung

Michael Xiaoxuan Yang

Chun Yan

Hua Chung

Qi Zhang

Dixit V Desai

Peter J Lembesis

Sio On Lo

Shanyu Wang

Apparatus, systems, and methods for conducting an etch removal process on a workpiece are provided. The method can include generating a plasma from a deposition process gas in a plasma chamber using a plasma source to deposit a passivation layer on certain layers of a high aspect ratio structure. The method can include generating a plasma from an etch process gas in a plasma chamber using a plasma source to remove certain layers from the high aspect ratio structure. The method can include removing silicon nitride layers at a faster etch rate than silicon dioxide layers on the high aspect ratio structure.

Processing of workpieces using deposition process and etch process

Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.

Silicon mandrel etch after native oxide punch-through

Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has at least one material layer and at least one structure thereon. The method includes admitting a process gas into a plasma chamber, generating one or more species from the process gas, and filtering the one or more species to create a filtered mixture. The method further includes providing RF power to a bias electrode to generate a second mixture and exposing the workpiece to the second mixture to etch a least a portion of the material layer and to form a film on at least a portion of the material layer.

Spacer etching process

Systems and methods for processing a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a spacer treatment process to expose the workpiece to species generated from a first process gas in a first plasma to perform a spacer treatment process on a spacer layer on the workpiece. The first plasma can be generated in the processing chamber. After performing the spacer treatment process, the method can include performing a spacer etch process to expose the workpiece to neutral radicals generated from a second process gas in a second plasma to etch at least a portion of the spacer layer on the workpiece. The second plasma can be generated in a plasma chamber that is remote from the processing chamber.

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Fremont, CA, United States of America

Tsai Wen Sung