Tokyo Electron Limited

Toyohiro Kamada

Noriaki Fukiage

Takayuki Karakawa

Jun Ogawa

Takeshi Oyama

Akihiro Kuribayashi

Kentaro Oshimo

Hideomi Hane

Shimon Otsuki

Shuji Azumo

Yuichiro Wagatsuma

Shinichi Ike

There is provided a film forming method, including: forming a film containing silicon, carbon and nitrogen on a substrate in a first process; and oxidizing the film with an oxidizing agent containing a hydroxy group and subsequently supplying a nitriding gas to the substrate in a second process.

Film forming method and film forming apparatus

A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

Disclosed is a method of forming a nitride film on a substrate to be processed ('processing target substrate') in a processing container. The method includes an adsorption step of supplying a precursor gas including a silicon-containing gas into the processing container, and adsorbing a molecule of the precursor gas onto a surface of the processing target substrate, and a reaction step of supplying a reaction gas including a nitrogen- and hydrogen-containing gas while supplying microwaves from an antenna to generate plasma of the reaction gas just above the processing target substrate, and performing a plasma processing, by the generated plasma, on a surface of the substrate to be processed on which the molecule of the precursor gas has been adsorbed.

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Nirasaki, Japan

Toyohiro Kamada