Japan Synthetic Rubber Co., Ltd.

Jsr Corporation

Arakawa Chemical Industries, Ltd.

Toshiyuki Ota

Akira Tsuji

Eiichi Kobayashi

Hozumi Sato

Toru Kajita

Takao Miura

Makoto Murata

Katsumi Inomata

Yoshiji Yumoto

Mikio Yamachika

Kimiyasu Sano

Shin-ichiro Iwanaga

Mitsuhito Suwa

Hideki Chiba

Nasahiro Akiyama

Masahiro Akiyama

Masaru Ohta

Katsutoshi Igarashi

Kazuaki Niwa

Masako Suzuki

Hidetoshi Miyamoto

Shinji Shiraki

Hideaki Tashiro

Yoshiyuki Michino

A radiation-sensitive resin composition including (A) a resin containing an alicyclic skeleton in its backbone, and (B) a radiation-sensitive acid-generating agent, is provided. This composition is excellent in transparency with respect to radiation and dry etching resistance, and can give a photoresist pattern excellent in adhesion to substrates, sensitivity, resolution, and developability.

Radiation-sensitive resin composition

A radiation sensitive resin composition which comprises (A) a polymer which becomes alkali-soluble in the presence of an acid and (B) a radiation sensitive acid generator which generates an acid upon irradiation with a radiation, said polymer (A) comprising two recurring units represented by the general formulas (1) and (2) and a recurring unit which acts to reduce the solubility of the polymer is an alkali developer after the irradiation:

Radiation sensitive resin composition

Positive-tone and negative-tone chemically amplified resist compositions comprising: (a-1) a blocked resin, (a-2) a combination of an alkali-soluble resin and a dissolution controlling agents, or (a-3) a combination of an alkali-soluble resin and a crosslinking agent, (b) a photoacid generator, and (c) specific kinds of solvents. The both positive-tone and negative-tone resist compositions exhibits superior sensitivity, high resolution capability, and excellent storage stability, and can be excellently applied especially to large sized substrates by spincoating for producing excellently shaped patterns by irradiation. The compositions can be used with advantage as a chemically amplified resist for the manufacture of semiconductor devices or integrated circuits (ICs).

Chemically amplified resist composition

A radiation sensitive resin composition comprising an alkali-soluble resin such as a polyvinyl phenol or a phenol resin other than a polyvinyl phenol having a weight average molecular weight of 2,000 or higher, a cross-linking agent such as an amino resin having two or more active methylol groups in a molecule, a particulate rubbery material comprising a cross-linked polymer chemically modified with an epoxy compound, a liquid rubbery material having a number average molecular weight between 1,000 and 10,000 and a glass transition temperature of -20.degree. C. or lower, and a radiation polymerization initiator. The composition is best suited for use as a material for preparing an insulating layer interposed between two layers of conductive wiring that are arranged in an overlaying stack.

A negative photoresist stripping liquid composition is provided which comprises from 30 to 75% by weight of dimethyl sulfoxide, from 20 to 65% by weight of 1,3-dimethyl-2-imidazolidinone, from 0.1 to 5% by weight of a tetraalkylammonium hydroxide and from 0.5 to 15% by weight of water. The composition has a superior stripping performance especially against photoresists that are alkali-developable and can form films of at least 20 .mu.m in thickness, and has no problem of freezing even when stored outdoors in the winter. The composition is useful for the stripping of negative photoresists for bump formation and for fabricating circuit substrates.

Negative photoresist stripping liquid composition

A radiation sensitive resin composition comprising:

Radiation sensitive resin composition and material for forming bumps

A positive photoresist composition including (A) 100 parts by weight of an alkali-soluble novolak resin, and based thereon; (B) 5 to 50 parts by weight of an alkali-soluble acrylic resin containing, as s, 10 to 80% by weight of a unit of a radical-polymerizable compound having an alcoholic hydroxyl group and 3 to 50% by weight of at least one of a unit of a radical-polymerizable compound having a carboxyl group and a unit of a radical-polymerizable compound having a phenolic hydroxyl group; (C) 5 to 100 parts by weight of a quinonediazide group-containing compound; and (D) a solvent, is provided. This composition has a good adhesion to substrates at the time of development and a good plating solution resistance and moreover can be well wetted with plating solutions, can be well developed with alkali developing solutions and can be well stripped from substrates at the resist unexposed areas, and is suited for the formation of thick films suitable as bump forming materials.

Positive photoresist composition

A radiation sensitive resin composition containing an alkali soluble resin and a 1,2-quinonediazide compound of a polyphenol or a radiation sensitive resin composition containing an alkali soluble resin and a 1,2-quinonediazide compound and a polyphenol compound.

A radiation sensitive resin composition which comprises (A) a polymer which becomes alkali-soluble in the presence of an acid and (B) a radiation sensitive acid generator which generates an acid upon irradiation with a radiation, said polymer (A) comprising two recurring units represented by the general formulas (1) and (2) and a recurring unit which acts to reduce the solubility of the polymer in an alkali developer after the irradiation: ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group and R.sup.2 represents a hydrogen atom or a methyl group. Said composition provides a chemically amplified positive resist which can give a fine pattern with a good pattern shape, and said resist is freed from volume shrinkage, peeling failure and adhesive failure, is excellent in dry etching resistance and effectively reacts with various radiations to give a good pattern shape which is excellent in photolithographic process stability, said pattern shape having no thinned portion at the upper part.

The present invention provides a radiation sensitive resin composition which contains an alkali soluble resin and a 1,2-quinonediazide compound represented by the following formula, for example. ##STR1## The radiation sensitive resin composition of the present invention has an excellent developability, provides an excellent pattern shape, is superior in sensitivity and resolution, and has greatly improved focus latitude and heat resistance in particular. Therefore, the radiation sensitive resin composition of the present invention can be suitably used as a resist for the production of LSIs.

Radiation sensitive resin composition containing quinone diazide ester

A chemically amplified resist comprising an alkali-soluble resin or a resin having at least one acid-dissociable group which is alkali-insoluble or -sprairingly soluble but becomes alkali-soluble upon dissociation of said acid dissociable group due to an acid; a radiation-sensitive, acid-generating agent; and an optional component in which resist, the radiation-sensitive, acid-generating agent generates an acid upon irradiation with a radiation in the irradiated portion and the solubility of the resin component and optional component in a developing solution is varied in the irradiated portion by a chemical reaction caused by the catalytic action of the acid, whereby a pattern is formed, characterized in that a compound having a nitrogen-containing basic group is contained in the resist. Said resist is superior in developability, pattern form, resolution, focus tolerance and yield of residual film thickness, has good process stability, and can be suitably used even in irradiation with, in particular, a radiation having a wavelength equal to or smaller than far ultraviolet rays, for example, an excimer laser or the like.

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Yokkaichi, Japan

Toshiyuki Ota