Micron Technology Incorporated

Toshiyuki Maenosono

Manabu Ito

Yuta Kikuchi

Yoshihiro Saeki

Keizo Kawakita

Shigeru Sugioka

Hidenori Yamaguchi

Wataru Hoshino

A method including forming an insulating film over first, second, third and fourth regions of a semiconductor substrate; forming a polyimide film on the insulating film; and patterning the polyimide film with a lithography method using a photomask including at least a first region of a first transmittance rate, a second region of a second transmittance rate, a third region having a shading material, and a fourth region, wherein the first, second, third and fourth regions of the photomask correspond to the first, second, third and fourth regions of the semiconductor substrate, respectively.

Method of forming a semiconductor device, and a photomask used therein

Apparatuses and methods using a silicon on insulator (SOI) substrate are described. An example apparatus includes: a substrate including a first surface and a second surface opposite to the first surface; a circuit formed in the first surface; a first electrode through the substrate from the first surface to the second surface; and a first insulative film around the first electrode. The first electrode includes: a first portion formed in the substrate; and a second portion continuous to the first portion and protruding from the second surface. The first insulative film is formed between the first portion of the first electrode in the substrate and extending to a side surface of the second portion of the first electrode.

Method of forming vias using silicon on insulator substrate

Growing community of inventors

Higashihiroshima, Japan

Toshiyuki Maenosono