Fuji Corporation

Fuji Machine Mfg. Co., Ltd.

Nu Eco Engineering Co., Ltd.

Toshiyuki Ikedo

Masaru Hori

Hiroyuki Kano

Takahiro Jindo

Akihiro Niwa

Shinji Takikawa

Naofumi Yoshida

Kazuo Amano

Takuya Iwata

Tomoko Niwa

Soichi Shiraki

Tetsuya Koike

A practical plasma processing machine is provided, in which attachment mechanism is provided for attaching plasma head to attachment section of a head moving device that moves the plasma head. Since the plasma head can be attached or detached, for example, it is easy to exchange it with a different type of plasma head, remove for maintenance, attaching after maintenance, or the like.

Plasma processing machine

A plasma emitting device includes plasma head configured to generate a plasmarized gas and jet the plasmarized gas so generated from a nozzle thereof, a gas supply device configured to supply a gas to the plasma head while controlling a flow rate of the gas, gas tube connecting the gas supply device with the plasma head to constitute a gas flow path, and pressure detector configured to detect a pressure of the gas supplied from the gas supply deice. Pressures of gases which are supplied to the plasma head are detected for use for various purposes, whereby the practical plasma emitting device is made up. Specifically, for example, a head clogging, which is a clog impeding a gas flow in the plasma head, can be determined without difficulty based on the detected pressure.

Plasma exposure device

Head for an atmospheric pressure plasma equipment

Atmospheric-pressure plasma generation device of the present invention includes heat sinks. Flow paths are formed in the heat sinks, and cooling gas flows in the flow paths, thereby cooling lower housing in which a reaction chamber is formed. Here, the gas used for cooling is warmed by the heat of the lower housing. The warmed gas is supplied into heated gas supply device and heated by heater. The heated gas flows in lower cover and is emitted together with plasma gas from lower cover toward a processing object. Consequently, it is possible to perform cooling of the lower housing heated by electric discharge and perform heating of the processing object, and it is possible to reduce energy required for heating gas.

Plasma generation device and plasma irradiation method

A plasma generation system capable of more accurately measuring the actual temperature of a plasma gas applied to a target object. The plasma generation system includes: an emitting head configured to generate plasma gas by supplying power to electrodes provided in a reaction chamber to generate a plasma gas by converting a processing gas into plasma, and apply the generated plasma gas to a target object; and a temperature sensor configured to detect a temperature of the plasma gas and output a detection signal corresponding to the detected temperature. The temperature sensor is arranged at a position separated from an emission port of the emitting head from which the plasma gas is emitted. The emitting head is configured to be movable between the target object the temperature sensor.

Plasma generation system

A plasma-generating device including: a pair of electrodes; a pair of holders configured to hold ends of the pair of electrodes in a protruding state; and a casing in which is formed a first recess and that is configured to combine with the pair of holders in a state with the ends of the pair of electrodes that protrude from the pair of holders inserted into the first recess, wherein the combined casing and the pair of holders contact each other only at an opposite side to a side between the ends of the pair of electrodes that project from the pair of holders.

Plasma-generating device

An atmospheric pressure plasma device including a plasma head; a gas tube configured to supply a gas to the plasma head; a flow rate controller configured to control a flow rate of the gas supplied to the gas tube; a pressure sensor arranged downstream of the flow rate controller and configured to detect a pressure in the gas tube; and a determining section configured to determine a state of the device based on how the pressure in the gas tube deviates from a standard value specified for each flow rate of the supplied gas. As a result, it is possible to determine the gas leakage of the atmospheric pressure plasma device. Further, it is possible to determine whether plasma is being generated in a favorable state.

Atmospheric pressure plasma device

In a plasma generator, a reaction chamber is divided into a pair of insertion portions, for inserting a pair of electrodes, and a connecting segment that connects the pair of insertion portions. The connecting segment is narrower than the pair of insertion portions. Since the connecting segment is narrower than the insertion portions, the volume of the connecting segment is small. Accordingly, the process gas having a small volume is converted into plasma over the entire region of the connecting segment and along the wall surfaces that are continuous from each insertion portion to the connecting segment, thereby enabling the process gas to be converted to plasma efficiently. Further, the junctures of each of the pair of insertion portions and the connecting segment are smooth surfaces. As a result, heat from discharging is dispersed over the entire smooth surface, thereby suppressing carbonization from discharging.

Plasma generator

Plasma generating apparatus includes a pair of electrodes configured to generate plasma by discharge, a first supply path configured to supply processing gas along an outer periphery of each of the pair of electrodes, a second supply path configured to supply processing gas between the pair of electrodes, and a suction path configured to suck the processing gas supplied along an outer peripheral surface of each of the pair of electrodes via the first supply path.

Plasma generating apparatus

Water is flowed inside main body section formed from an insulating material such that a specified space remains inside the main body section. Electrodes and are arranged along the outer walls of the main body section and voltage is applied to the electrodes. Processing gas present inside the main body section is plasmarized and plasma is emitted to the water flowing inside the main body section.

Plasma emitting method and plasma emitting device

Plasma gas is ejected from inner gas ejection ports that are formed in a downstream side housing, and nitrogen gas is supplied as protective gas to a protective gas source between a housing and a cover section. Nitrogen gas is sucked in accompanying exhaust from inner gas ejection ports of plasma gas, and is ejected from the outer gas ejection ports. In this case, since a layer of nitrogen gas is formed in the periphery of plasma gas, it is possible to make it difficult to bring the plasma gas into contact with air, and it is possible to make it difficult to react a reactive species such as a radical in the plasma gas, oxygen in the air, and the like.

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Nagoya, Japan

Toshiyuki Ikedo