Tokyo Electron Limited

Tokyo Electron Limi Ted

Toshiya Tsukahara

Daisuke Hayashi

Yasuharu Sasaki

Hidetoshi Hanaoka

Yohei Uchida

Tetsuji Sato

Junichi Sasaki

Ayuta Suzuki

Shuhei Yamabe

Takaaki Nezu

Katsumi Horiguchi

Mitsuaki Sato

Yosuke Tamura

Kota Yachi

A placing table includes an edge ring disposed to surround a substrate, the edge ring having a first recess portion at a lower portion thereof; an electrostatic chuck having a first placing surface on which the substrate is placed, a second placing surface on which the edge ring is placed, and an electrode embedded therein to face the second placing surface; an annular member disposed to surround the electrostatic chuck, the annular member having a second recess portion; and an elastic member disposed in a space surrounded by the first recess portion, the electrostatic chuck and the second recess portion.

Placing table, positioning method of edge ring and substrate processing apparatus

A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

Plasma processing apparatus and plasma processing method

A focus ring for a plasma processing apparatus has an inner region, middle region, and outer region, disposed in this order from the inner side to surround a target substrate. On the side to be exposed to plasma, the surfaces of the inner region and outer region consist essentially of a dielectric, while the surface of the middle region consists essentially of a conductor. The middle region is arranged to shift the peak of plasma density to the outside of the peripheral edge of the target substrate. If there is no middle region, the peak of plasma density appears substantially directly above the peripheral edge of the target substrate.

Focus ring for semiconductor treatment and plasma treatment device

Exhaust ring for semiconductor equipment

Growing community of inventors

Miyagi, Japan

Toshiya Tsukahara