Seiko Instruments Inc

Sii Nanotechnology Inc.

Hitachi High-Tech Science Corporation

Toshio Doi

Yasuhiko Sugiyama

Toshiaki Fujii

Kazutoshi Watanabe

Tatsuya Asahata

Atsushi Uemoto

Osamu Takaoka

Hiroshi Oba

Hiroshi Matsumura

Masashi Muramatsu

Munenori Tasai

Provided is a focused ion beam apparatus including a control portion configured to: store in advance, in a condenser voltage table, a calculation value of a condenser voltage for obtaining a reference beam current for all each of a plurality of apertures; obtain an experimental value of the condenser voltage for obtaining the reference beam current for a reference aperture; obtain a correction value of the condenser voltage by subtracting the calculation value stored for the reference aperture from the experimental value for the reference aperture; obtain setting values of the condenser voltage by adding the correction value to the calculation values stored for each of the plurality of the apertures; and store the obtained setting value in the condenser voltage table.

Focused ion beam apparatus and method of adjusting ion beam optics

An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.

Method of correcting opaque defect of photomask using atomic force microscope fine processing device

A network system has a first LAN, a second LAN, and a storage device for storing data accessible from the first LAN and the second LAN. A control apparatus controls accessibility of the data stored in the storage device from the first LAN and the second LAN. The control apparatus includes an access prevention device for preventing access from the first LAN to the second LAN and from the second LAN to the first LAN and a device for overriding a setting of the access prevention device to allow accessibility of the second LAN from the first LAN.

Network system for controlling independent access to stored data among local area networks

A focused ion beam machining method for etching the surface of a sample to obtain a desired profile formation portion by recurrently irradiating a focused ion beam to a desired region of the sample, wherein the recurrently scanned region is enlarged with the elapse of time during the etching and scanning of the sample with the focused ion beam is performed in parallel with the profile formation portion, and the profile formation portion is scanned after all other portions of the recurrently scanned region have been scanned.

Focused ion beam machining method and device thereof

To provide a focused ion beam optical axis alignment method and a focused ion beam apparatus which make axis alignment work of for example when replacing an ion source of a focused ion beam apparatus easy. A method for adjusting the optical axis of a focused ion beam apparatus having an ion source part 3 made up of an ion source 1 for producing an ion beam and a pullout electrode 2, a monitoring aperture 5 which passes a central part having a high energy density of the ion beam and measures the electric current thereof, a charged particle optical system 9 including a condenser lens 6, an aperture 7 and an objective lens 8, and a deflecting electrode 16 which scans the focused ion beam, wherein while moving the ion source 1 in a direction intersecting orthogonally with the optical axis of the ion beam the current measured by the monitoring aperture 5 and the overall ion beam quantity produced from the ion source are monitored and a voltage impressed on the pullout electrode is controlled so that this current becomes constant and the position of the ion source 1 is adjusted so that the overall ion beam quantity becomes a minimum.

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Chiba, Japan

Toshio Doi