Ulvac, Inc.

Toshimitsu Uehigashi

Yasushi Higuchi

Harunori Ushikawa

Naoki Hanada

Michio Ishikawa

Kazuhiro Sonoda

The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using Hgas at a temperature which is less than the heat-treatment temperature and which never causes the formation of any NiSi film in order to remove any impurity present in the Ni film, and the resulting Ni film is then subjected to a silicide-annealing treatment to thus form the NiSi film.

Method for forming NiSi film, method for forming silicide film, method for forming metal film for use in silicide-annealing, apparatus for vacuum processing and film-forming apparatus

A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), Hgas and NHgas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280&#xb0; C. and not higher than 350&#xb0; C.

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Shizuoka, Japan

Toshimitsu Uehigashi