Kabushiki Kaisha Toshiba

Toshiba Kikai Kabushiki Kaisha

Toshimitsu Ohmine

Yuusuke Sato

Keiichi Akagawa

Takaaki Honda

Akira Ishihata

Akio Ui

Naoki Tamaoki

Takashi Kataoka

Martin Schrems

Keiiti Akagawa

The present invention provides a chemical vapor deposition using, as feed gases, a silicon compound and hydrazine or a derivative thereof, or a compound containing both silicon and nitrogen, and a process and a system useful for chemical vapor deposition growth, in which a chlorinated silane compound and ammonia, feed gases, are preliminarily reacted with each other, and the resulting reaction gas mixture from which the ammonium halide produced by the preliminary reaction has been eliminated is fed to form a thin film on a substrate.

Ammonium halide eliminator, chemical vapor deposition system and chemical vapor deposition process

A thermal processing apparatus having a substrate holding unit for mounting a substrate, a housing for constituting a processing chamber to house the substrate mounted on the substrate holding unit, a heat source arranged around the housing, and a shielding means arranged between the heat source and an end of the substrate, the shielding means serving to shield heat radiation radiated into the end of the substrate.

Thermal processing apparatus with a shield between heater and substrate

A substrate such as a semiconductor wafer is transferred to a plurality of process chambers so as to perform prescribed processes. An inspection chamber is air-tightly connected to each of the process chambers. The inspection chamber is provided with a handler which loads and unloads the substrate. A gate valve is disposed between each process chamber and the inspection chamber. By this gate valve, each chamber is air-tightly closed.

Substrate processing apparatus and substrate processing method

A vapor-phase deposition apparatus comprises a substrate-supporting unit for supporting a substrate, a heater for heating the substrate-supporting unit, and a gas-supplying unit for supplying gas for forming a thin film on the substrate supported by the substrate-supporting unit. The substrate-supporting unit includes a first member to be heated to a predetermined temperature by the heater, a second member for supporting a peripheral part of the substrate, and a support member for supporting the second member on the first member and located outside a periphery of the substrate.

Vapor-phase deposition apparatus and vapor-phase deposition method

A gas-phase growing apparatus is provided with a reaction furnace, and a substrate having a minute depression is placed inside the reaction furnace. In the reaction furnace, a reaction gas is supplied onto the substrate, so as to cause gas-phase growth of a layer of a reaction product within the depression of the substrate. The reaction gas is supplied such that the pressure in the reaction furnace is alternately changed between a first pressure and a second pressure. The first pressure is a pressure capable of producing a continuous or intermediate stream in which the collision between the molecules of the reaction gas is predominant, while the second pressure is a pressure lower than the first pressure. The gas-phase growing apparatus is also provided with a pipe for introducing the reaction gas into the reaction furnace, a valve for controlling the flow rate of the reaction gas, a pump for discharging the unconverted reaction gas from the reaction furnace, an orifice for providing flow resistance for the discharge side of the reaction furnace, a pressure meter for measuring the internal pressure of the reaction furnace, and an electromagnetic valve operating in association with the pressure meter.

Gas-phase growing method and apparatus for the method

An argon (Ar.sup.+) laser has a resonator. A reaction chamber is integrally formed in the resonator. A voltage is applied to electrodes, which discharge electricity to excite argon atoms in the resonator to produce a laser beam. The laser beam is continuously oscillated between total reflection mirrors disposed at opposite ends of the resonator. A substrate is disposed in the reaction chamber into which a material gas is introduced. The material gas absorbs the laser beam, to decompose and deposit as a thin film over the substrate.

Vapor deposition apparatus

A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor carrier to hold the substrates respectively, a driving motor for rotating the susceptor carrier such that the substrates held by the susceptors are revolved with respect to the reactor vessel, and a converting mechanism for converting a rotation motion of the susceptor carrier rotated by the driving motor into a motion for rotating the susceptors together with the substrates around themselves. The converting mechanism is disposed within the hollow of the susceptor carrier.

A vapor deposition system deposits a semiconductor film on a substrate. The system comprises a susceptor on which the substrate is positioned, and a reactor tube in which the susceptor having the substrate is positioned and the semiconductor film is deposited on the substrate. The reactor tube is composed of two parts to be fitted to and separated from each other. An airtight vessel airtightly covers the reactor tube. The system further comprises a mover for moving at least one of the two parts of the reactor tube relative to the other part, thereby fitting and separating the two parts to and from each other. A carrying device is provided for the system to carry the susceptor having the substrate from the airtight vessel into the reactor tube through an opening to be opened by separating the two parts of the reactor tube from each other, and to carry the susceptor from the reactor tube to the airtight vessel through the opening.

Vapor deposition system

A vapor deposition apparatus for forming thin films on substrates with reactive gases, by rotating and revolving the substrates while heating the substrates in a reactor vessel, comprises a hollow susceptor carrier rotatably disposed inside the reactor vessel, susceptors rotatably disposed on the susceptor carrier to hold the substrates respectively, a driving motor for rotating the susceptor carrier such that the substrates held by the susceptors are revolved with respect to the reactor vessel, and a converting mechanism for converting a rotating motion of the susceptor carrier rotated by the driving motor into a motion for rotating the susceptors together with the substrates around themselves. The converting mechanism is disposed within the hollow of the susceptor carrier.

An exhaust processing apparatus comprises a cracking furnace for cracking and solidifying exhaust discharged from a reactor for forming crystals on a semiconductor substrate, a first collecting device for collecting relatively large components solidified in the cracking furnace, a second collecting device for collecting relatively small solidified components passed through the first collecting device, and a chemical or a physical adsorbing member for chemically or physically adsorbing the exhaust passed through the first and second collecting devices. The apparatus may be provided with bypass piping for bypassing a particular section of the apparatus, a shutoff member for opening and closing the bypass piping and a control device for controlling the shutoff member. The cracking furnace of the apparatus has a heating portion for heating the exhaust, an enlarged portion disposed downstream the heating portion and having a passage whose cross-sectional area is larger than that of the heating portion, and a cooling mechanism for forcibly cooling the heated exhaust.

Growing community of inventors

Tokyo, Japan

Toshimitsu Ohmine