Tokyo Ohka Kogyo Co., Ltd.

Toshimasa Nakayama

Hidekatsu Kohara

Kousuke Doi

Masakazu Kobayashi

Hatsuyuki Tanaka

Mitsuru Sato

Kazumasa Wakiya

Kazufumi Sato

Kazuyuki Nitta

Nobuo Tokutake

Satoshi Niikura

Masahito Tanabe

Hiroshi Komano

Akiyoshi Yamazaki

Yoshika Sakai

Etsuko Iguchi

Hideo Hada

Ken Miyagi

Yoshio Hagiwara

Shingo Asaumi

Katsumi Oomori

Taku Nakao

Takako Suzuki

Masanori Miyabe

Kiyoshi Ishikawa

Fumitake Kaneko

Atsushi Sawano

Yoshinori Sakamoto

Kouichi Takahashi

Hiroshi Hosoda

Yoshiyuki Sato

Miki Kobayashi

Hayato Ohno

Hisashi Nakane

Masaki Kurihara

Akira Yokota

Tetsuya Kato

Hiroyuki Yamazaki

Remi Numata

Tatsuya Hashiguchi

Yoshiaki Arai

Atsuko Hirata

Satoshi Shimatani

Katsuya Tanitsu

Shinichi Hidesaka

Hideya Kobari

Atsushi Kawakami

Shinichi Kono

Masato Saito

Ryuusaku Takahashi

Sachiko Tamura

Satoshi Fujimura

Taku Hirayama

Jun Koshiyama

Hiroki Endo

Toshikazu Tachikawa

Yoshiki Sugeta

Miwa Miyairi

Tatsuhiko Shibuya

Mitsuo Hagihara

Hiroyuki Iida

Taiichiro Aoki

Daisuke Hayashi

Yasuo Masuda

Hisanobu Harada

Tetsuya Nakajima

Yasuhide Ohuchi

Kazuhiko Nakayama

Susumu Okano

Naoki Aoyanagi

Isao Satoh

Yoshito Ando

Junichi Mizuta

Hatsuyuki Tanka

Yasuyuki Takeda

Yoshiyuki Satoh

Koichi Takahashi

A phenol novolak resin has a peak intensity ratio of ortho-ortho bond (o-o)/ortho-para bond (o-p)/para-para bond (p-p) in a resin structure not substantially varying in each molecular weight fraction and has a weight average molecular weight (Mw) of 3000 to 20000 in terms of polystyrene, which peak intensity ratio is detected byC-NMR analysis. The phenol novolak resin can form both dense pattern and isolation pattern with good shapes in the formation of a fine resist pattern of not more than 0.35 &#x3bc;m and has satisfactory sensitivity, definition, and focal depth range properties, and has a resin composition being uniform in each molecular weight fraction. A process for producing the phenol novolak resin, and a positive photoresist composition using the resin are also provided.

Phenol novolak resin, production process thereof, and positive photoresist composition using the same

The present invention provides a rinsing solution for lithography with which finely processed parts of a resist pattern can be well rinsed without corroding a metallic film made of Al, Al&mdash;Si, Al&mdash;Si&mdash;Cu, etc. and which is economically advantageous and has a high safety; and a method for processing a substrate with the use of the same. The rinsing solution contains at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether and ethyl lactate.

Rinsing solution for lithography and method for processing substrate with the use of the same

The present invention provides a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, and the ingredient (B) is a quinonediazide ester of, for example, 2,6-bis&lsqb;4-hydroxy-3-(2-hydroxy-3,5-dimethylbenzyl)-2,5-dimethylbenzyl&rsqb;-4-methylphenol, where the average degree of esterification of 20% to 80%.

Positive photoresist composition and process for synthesizing polyphenol compound

A positive photoresist composition includes (A) an alkali-soluble resin, (B) a photosensitizer including, for example, a quinonediazide ester of bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane, and (C) a compound having a gram absorption coefficient of 5 to 60 with respect to light with a wavelength of 365 nm.

Positive photoresist composition, substrate with a photosensitive film and process for imaging a resist pattern

Positive photoresist composition and process and synthesizing polyphenol compound

A positive photoresist composition includes (A) an alkali-soluble resin, in which part of phenolic hydroxyl groups is protected by an acid-decomposable group; (B) a quinonediazide ester; and (C) a compound which generates an acid upon irradiation of light with a wavelength of 365 nm. This positive photoresist composition can form a fine pattern of about 0.35 &mgr;m in the photolithographic process using i-ray (365 nm), is excellent in focal depth range properties in such an ultrafine region, and has a high sensitivity.

Positive photoresist composition comprising a phenolic compound having both an acid-decomposable group and a naphthoquinonediazide sulfonyl group

A novolak resin precursor is composed of bonded phenolic moieties, one of the hydrogen atoms in the o- or p-positions relative to the hydroxy group of each phenolic moiety is substituted with an alkyl or alkenyl group having 1 to 3 carbon atoms, and the other two hydrogen atoms are bonded through methylene bonds. The content of ortho-ortho bonding is 30 to 70% relative to the number of total methylene bonds and the weight average molecular weight of the precursor is 300 to 10,000. A novolak resin is obtained from this precursor, and a positive photoresist composition comprises this novolak resin. The invention provides a positive photoresist composition that comprises less binuclear compounds, suppresses scum formation, is excellent in terms of definition and coating performance and provides a resist pattern having satisfactory heat resistance.

Novolak resin precursor, novolak resin and positive photoresist composition containing the novolak resin

A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis&lsqb; -dimethyl- -( -hydroxy- -methylbenzyl)- -hydroxyphenyl&rsqb;methane and/or -bis&lsqb; -hydroxy- -( -hydroxybenzyl)- -methylbenzyl&rsqb;- -cyclohexylphenol, and (C) -bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.

Positive photoresist composition and process for forming resist pattern

Disclosed are a positive photoresist composition including (A) an alkali-soluble resin, (B) a photosensitizer containing a quinonediazide ester of, e.g., bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane and (C) e.g., 2,6-bis(2,5-dimethyl-4-hydroxybenzyl)-4-methylphenol; and a process including the steps of coating the composition onto a 8 to 12-inch substrate, drying, exposing and developing the same. The composition which can form a pattern having a good shape whose dimensional changes are minimized in a wide range over surface of the substrate, particularly in processes using a large-diameter substrate, and the process for forming a resist pattern using the composition are provided.

Positive photoresist composition and process for forming resist pattern using same

Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.

Developer solution for acitinic ray sensitive resist

A positive photoresist composition includes (A) an alkali-soluble resin, and (B) a photosensitizer including an ester of a 1,2-naphthoquinonediazidesulfonyl compound with a compound of the following formula (I). This positive photoresist composition has satisfactory sensitivity, definition, and depth of focus properties, can form both dense patterns and isolation patterns with good shapes in the formation of mixed resist patterns, and can minimize inverted taper shape formation of isolation resist patterns induced by shifts of focal depth to the minus side.

Positive photoresist composition

In a positive photoresist composition including (A) an alkali-soluble resin and (B) a photosensitizer, Ingredient (B) contains (B-1) a quinonediazide ester of, e.g., bis&lsqb;2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl&rsqb;methane or 2,4-bis&lsqb;4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl&rsqb;-6-cyclohexylphenol, and (B-2) a quinonediazide ester of, e.g., methyl gallate or 2,2-bis(2,3,4-trihydroxyphenyl)propane. The composition exhibits high sensitivity and definition, and improved focal depth range properties and underexposure margin.

A positive photoresist composition for forming a contact hole which comprises (A) an alkali-soluble resin; (B) a naphthoquinonediazide group-containing compound; and (C) a solvent, wherein the ingredient (B) comprises: at least one naphthoquinonediazidesulfonic ester of a polyphenol compound, where said polyphenol compound is composed of from 4 to 6 benzene rings each bonding via a methylene chain, each of the methylene chains is in a meta position to other methylene chains, and each of the benzene rings has a hydroxyl group is provided. According to tie present invention, a positive photoresist composition and a process for forming a contact hole can be provided each of which gives a contact hole pattern image in exact accordance with a mask pattern without dimple formation, in the contact hole forming technologies using the phaseshift method.

Positive photoresist composition and process for forming contact hole

The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.

Photoresist stripping liquid compositions and a method of stripping photoresists using the same

The present invention provides a composition for forming an antireflective coating film which is not liable to intermixing between the resist composition layer and the antireflective coating layer and a method for forming a resist pattern having an excellent dimensional accuracy and section shape. The composition consists of (A) a compound which produces an acid upon irradiation with actinic rays, (B) a compound which undergoes crosslinking reaction in the presence of an acid, (C) a dye and (D) an organic solvent. The method for forming a resist pattern comprises applying the composition for forming an antireflective coating film to a semiconductor substrate, drying the composition coated, irradiating the entire surface of the coated material with actinic rays so that it undergoes crosslinking reaction to form an antireflective coating film thereon, applying a resist composition to the antireflective coating film, drying the coated material, and then subjecting the coated material to lithographic processing to form a resist pattern thereon.

Composition for forming antireflective coating film and method for forming resist pattern using same

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Kanagawa, Japan

Toshimasa Nakayama