Renesas Technology Corp.

Mitsubishi Electric Engineering Company, Limited

Other

Toshiki Oono

Hirotoshi Ise

Yasuhiro Kimura

Minoru Hanazaki

Toshio Komemura

Toshihiko Noguchi

Masato Toyota

Tatsuo Mizuno

A centrifugal dryer of the present invention includes: a chamber for performing drying processing for plural substrates; a cradle, installed inside chamber, and drying plural substrates by rotation driving in a state of being held therein; and an elastic wave sensor for detecting an elastic wave generating upon striking of a chip from plural substrates to said chamber during the processing therefor.

Centrifugal dryer, manufacturing method for semiconductor device and semiconductor manufacturing apparatus

A gas analyzer for a semiconductor treater improved to be capable of monitoring leakage or change of gas composition influencing treatability of the semiconductor treater in situ is provided. A duct is provided on the outer wall of a chamber of the semiconductor treater for taking out gas to be analyzed from the chamber. A gas analytic chamber stores the gas to be analyzed taken out through the duct. A discharge formation part is mounted in the vicinity of the gas analytic chamber. The discharge formation part includes a high frequency generation coil generating a high frequency and forming a plasma of the gas to be analyzed in the gas analytic chamber. This gas analyzer further comprises a spectrometer analyzing the emission wavelength of the plasma of the gas to be analyzed.

Gas analyzing method and gas analyzer for semiconductor treater

A defect inspecting device for a wafer is built in a positioning device for positioning a wafer , as a substrate to be processed, in a semiconductor manufacturing process. Light is irradiated on the wafer held on a vacuum holding base while rotating the wafer at least one rotation from a position where the wafer is positioned and the scattered light is received. An operation unit and a control unit judge that if the intensity of the scattered light exceeds a predetermined threshold, a defect is detected on the wafer

Defect inspecting device for substrate to be processed and method of manufacturing semiconductor device

Growing community of inventors

Hyogo, Japan

Toshiki Oono