Shin-etsu Handotai Co., Ltd.

Toshikazu Imai

Kazuhiko Yoshida

Taishi Wakabayashi

Osamu Ishikawa

Miho Niitani

A method for manufacturing a bonded SOI wafer, the method using a silicon single crystal wafer having a resistivity of 100 &#x3a9;&#xb7;cm or more as the base wafer, and including steps of: forming an underlying insulator film on a bonding surface side of the base wafer; depositing a polycrystalline silicon layer on a surface of the underlying insulator film; polishing a surface of the polycrystalline silicon layer; modifying the polycrystalline silicon layer by performing ion implantation on the polished polycrystalline silicon layer to form a modified silicon layer; forming the insulator film on a bonding surface of the bond wafer; bonding the bond wafer and a surface of the modified silicon layer of the base wafer with the insulator film interposed therebetween; and thinning the bonded bond wafer to form an SOI layer. This provides a bonded SOI wafer excellent in harmonic wave characteristics.

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Chikuma, Japan

Toshikazu Imai