Tokyo Electron Limited

Toshihisa Ozu

Tetsuya Nishizuka

Takashi Tsukamoto

Naoki Matsumoto

Masahiko Takahashi

Shota Yoshimura

Kazuto Takai

Kosuke Kariu

Toshihisa Nozawa

Masaru Sasaki

Jun Yoshikawa

Hiroto Ohtake

Akinori Kitamura

Takehiro Tanikawa

Masaki Inoue

Yusuke Shimizu

Hai Woo Lee

Michihisa Takachi

Jun Hashimoto

Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Plasma processing apparatus and plasma etching apparatus

An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.

Method for processing base body to be processed

An organic film can be etched while suppressing damage on an underlying layer. A method of etching the organic film includes etching the organic film within a processing vessel of a plasma processing apparatus which accommodates a processing target object. A processing gas containing a hydrogen gas and a nitrogen gas is supplied into the processing vessel, and plasma of the processing gas is generated. Further, a flow rate ratio of the hydrogen gas to a flow rate of the processing gas is set to be in a range from 35% to 75%, and a high frequency bias power for ion attraction to the processing target object is set to be in a range from 50 W to 135 W, in the etching of the organic film.

Method of etching organic film

A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., Hgas.

Resist mask processing method using hydrogen containing plasma

A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Clgas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Clgas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Semiconductor device manufacturing method

A plasma etching apparatus includes a process chamber, a susceptor, microwave permeable plate that is made of a dielectric material that allows microwaves to pass therethrough, a microwave supplying portion including a microwave generation apparatus that generates microwaves of a predetermined frequency, a gas supplying portion for supplying a process gas, an evacuation portion, a bias electric power supplying portion; and an alternating bias electric power control portion that controls the alternating bias electric power, wherein the alternating bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.

Plasma etching apparatus

There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamberfor performing a plasma process on a target substrate W; a gas supply unitfor supplying a plasma processing gas into the processing chamber; a supporting table positioned within the processing chamberand configured to support the target substrate thereon; a microwave generatorfor generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamberby using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber; a bias power supply unit for supplying AC bias power to the supporting table; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method

An etching method can prevent adverse effects of oxygen plasma from arising under an insulating film when etching the insulating film formed on a substrate. The etching method includes: a first etching step for exposing the insulating film to processing gas that has been turned into a plasma to etch the insulating film to a portion in the thickness direction; a deposition material removing step for exposing the insulating film remaining after completion of the first etching to oxygen plasma to remove deposition material deposited on the surface of the remaining insulating film; and a second etching of exposing the remaining insulating film to processing gas that has been turned into a plasma to etch the remaining insulating film.

Etching method and device

Plasma treatment device and plasma treatment method

A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.

Growing community of inventors

Hwaseong-si, South Korea

Toshihisa Ozu