Tokyo Electron Limited

Toshihiro Tojo

Kazuo Sasaki

Tsutomu Satoyoshi

Hitoshi Saito

An inductively-coupled plasma processing apparatus for performing an inductively-coupled plasma processing on a rectangular substrate, includes: a processing container; a mounting table for mounting the substrate thereon; a rectangular metal window provided to be electrically insulated from the processing container while facing the mounting table; and an antenna unit for generating an inductively-coupled plasma inside the processing container. The metal window is divided into divided regions electrically insulated from each other by a first division extending in a radial direction toward each corner portion of the metal window. The antenna unit includes a first high-frequency antenna in which antenna segments having planar portions facing an upper surface of the metal window are arranged. Each antenna segment is configured by spirally winding an antenna wire in a vertical direction orthogonal to the upper surface of the rectangular metal window so that a winding axis is parallel to the upper surface.

Inductively-coupled plasma processing apparatus

An inductively coupled plasma processing apparatus performs plasma processing on a substrate by generating an inductively coupled plasma in a plasma generation region in a processing chamber. The apparatus includes a high frequency antenna for generating the inductively coupled plasma in the plasma generation region and a metal window provided between the plasma generation region and the high frequency antenna. The metal window is firstly divided into two or more sections electrically insulated from each other by a line along a peripheral direction of the metal window and then secondly divided into sections electrically insulated from each other by lines along directions crossing with the peripheral direction.

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Nirasaki, Japan

Toshihiro Tojo