Other

Toshihiro Ii

Tadahiro Ohmi

Kazuhiko Kawada

Takahisa Nitta

Noboru Kubota

Masatoshi Hashino

Mitsunori Nakamori

A wet cleaning apparatus can remove trace heavy metals, colloidal matter or other impurities contained in ultra-pure water to be used as rinse water in semiconductor cleaning processes and suppress deposit of trace impurities such as heavy metals or other particles that would otherwise cause characteristics of such devices to deteriorate. A wet cleaning apparatus for rinsing with ultra-pure water as a rinse liquid by supplying ultra-pure water through a piping to a rinse location inside the apparatus. The rinse location is a point of use of the ultra-pure water. The wet cleaning apparatus includes a module filled with porous film in which polymer chains having at least one of an anion exchange group, a cation exchange group, and a chelating group are held in the middle of the piping positioned inside the apparatus. The wet cleaning apparatus further includes a means for adding hydrogen gas to the rinse liquid.

Wet cleaning apparatus utilizing ultra-pure water rinse liquid with hydrogen gas

A cleaning method capable of processing at room temperatures without conducting heating, uses little chemicals and water, and does not require special devices or materials. The chemical cleaning processes and rinse processes employ pure water or ultrapure water in a semiconductor wet cleaning process, rinse water or chemicals which suppresses formation of surface oxide films, removes particles and prevent their redeposition, and aids in the hydrogen termination of the silicon atoms. The cleaning method of the resent invention includes cleaning which is conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF, H O, and surfactant, while applying vibration having a frequency of 500 kHz or more, cleaning conducted using pure water containing ozone, cleaning conducted using a cleaning liquid containing HF and H O in order to remove oxide films, and cleaning which is conducted using pure water. After cleaning a material to be cleaned using chemicals, rinsing is conducted using pure water or ultrapure water containing hydrogen gas in an amount of 0.5 ppm or more and containing oxygen gas in an amount of 100 ppb or less.

Cleaning method

Growing community of inventors

Miyagi-ken, Japan

Toshihiro Ii