Shinko Electric Industries Co., Ltd.

Toshihiko Shimada

Shinichi Wakabayashi

Masao Nakazawa

Fumio Kuraishi

Kazuhito Yumoto

Norio Wada

Akihiko Murata

Norio Wakabayashi

A metal insert at least partially embedded in a molded resin mass comprises a metal insert blank, and a substantial amount of nickel or nickel alloy granulations produced over a surface of the metal insert blank, and the size of the granulations is at most 1.0 .mu.m. The metal insert blank is treated by a first electrolytic plating process such that a substantial quantity of copper nuclei spreaded over the surface, and the copper nuclei are grown up as the nickel or nickel alloy granulations by a second electrolytic-plating process. The first electrolytic-plating process is controlled such that an average thickness of plating is from about 0.5 to about 1.0 .mu.m, and the second electrolytic-plating process is controlled such that an average thickness of plating is from about 0.5 to about 1.5 .mu.m.

Metal insert and rough-surface treatment method thereof

A tape useful for an automatic bonding process when manufacturing a high-frequency semiconductor device, the tape comprising an insulating flexible film, and circuit patterns consisting of copper or copper-alloy formed on the insulating film, each of the circuit patterns having inner and an outer lead portions. A tin or tin-lead plated film is formed on the pattern, and an intermediate plated film is formed on at least the outer lead portion as an underlayer. The intermediate plated film consists of a metal or metal alloy selected from nickel, cobalt, gold, silver, platinum, palladium, indium or rhodium.

Tape automated bonding in semiconductor technique

A lead frame for a semiconductor device includes a metal strip made of copper or copper alloy having a plurality of wire bonding areas to which metal wires are directly connected by a direct bonding method. The wire bonding areas are electroplated with a thin silver film or a palladium film, so that formation of a copper oxidized film on the wire bonding area is substantially prevented.

Lead frame for a semiconductor device

Growing community of inventors

Nagano, Japan

Toshihiko Shimada