Corning Incorporated

Toshihiko Ono

Robert Alan Bellman

Nicholas James Smith

Indrajit Dutta

Yi-Cheng Hsieh

A glass or glass-ceramic carrier substrate, the substrate having undergone at least one complete cycle of a semiconductor fabrication process and having also undergone a reclamation process following the end of the semiconductor fabrication process; the glass or glass-ceramic carrier substrate comprising at least one of the following properties: (i) a coefficient of thermal expansion of less than 13 ppm/&#xb0; C.; (ii) a Young's Modulus of 70 GPa to 150 GPa; (iii) an IR transmission of greater than 80% at a wavelength of 1064 nm; (iv) a UV transmission of greater than 20% at a wavelength of 255 nm to 360 nm; (v) a thickness tolerance within the same range as the thickness tolerance of the carrier substrate before undergoing at least one complete cycle of the semiconductor fabrication process; (vi) a total thickness variation of less than 2.5 &#x3bc;m; (vii) a failure strength of greater than 80 MPa using a 4-point-bending test; (viii) a pre-shape of 50 &#x3bc;m to 300 &#x3bc;m.

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Corning, NY, United States of America

Toshihiko Ono