Kabushiki Kaisha Toshiba

Toshihiko Kitamura

Takashi Doi

Masaaki Ogawa

Takayuki Sakai

Yasukazu Mase

Atsuko Yamashita

Yoshitaka Matsui

Takeshi Kubota

A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type.

Solid-state imaging device and manufacturing method thereof

A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided in the trench and made of organic material. An empty space is formed between a side wall of the trench and a side surface of the light guiding member. The side surface of the light guiding member is curved so that a central part of the side surface along a vertical direction is closer to a center axis of the trench than both end parts of the side surface along the vertical direction.

Solid-state imaging device and method of manufacturing same

A CMP apparatus is used to subject a target surface of a semiconductor wafer to a polishing treatment, by moving the target surface and a polishing surface of a polishing cloth relative to each other while supplying a polishing liquid between the target surface and the polishing surface. Electric resistance is measured between pairs of measuring points arranged on opposite sides of dicing lines on the target surface, while subjecting the target surface to the polishing treatment. The polishing treatment is caused to be ended by comparing detected values of a changing rate in measured values of the electric property with a reference value set to correspond to an end point of the polishing treatment.

Chemical mechanical polishing apparatus and method

Growing community of inventors

Kanagawa-ken, Japan

Toshihiko Kitamura