Mitsubishi Materials Corporation

Toshihide Endoh

Toshiyuki Ishii

Masaaki Sakaguchi

Masayuki Tebakari

Naoki Hatakeyama

Masayuki Tebaraki

In a reactor cleaning apparatuswhich cleans an inner wall surfaceof a reactorwhich generates polycrystalline silicon, a bell jar of the reactorhas a dual structure, a through holeis formed along a vertical direction at a central portion of a substantially disc-like trayplaced in a horizontal state, a flange portionin which an opening edge of the reactoris placed is formed at an outer peripheral portion of the tray, a shaftis provided through the through holeof the trayso as to be rotatable and movable in the vertical direction, a nozzle devicewhich sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft, a drive mechanismwhich rotates the shaftand moves the shaft in the vertical direction is provided at a base end of the shaft, and steam pipingcapable of supplying the steam within the bell jar of the reactoris provided.

Reactor cleaning apparatus

An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.

Manufacturing apparatus of polycrystalline silicon

The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from &#x2212;10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.

Reactor for polycrystalline silicon and polycrystalline silicon production method

A polycrystalline silicon reactor which can prevent polycrystalline silicon which deposits on the surface of an electrode holding a silicon seed rod from being peeled off is provided. In a polycrystalline silicon reactor which applies an electric current to a silicon seed rod provided within a furnace, thereby heating the silicon seed rod, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod, the reactor includes, at a bottom plate of the furnace, an electrode holder provided so as to be electrically insulated from the bottom plate, and a seed rod holding electrode connected to the electrode holder, and holding the silicon seed rod toward the upside. Concavo-convex portions exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode.

Polycrystalline silicon reactor

A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.

An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other.

Apparatus for producing polycrystalline silicon

A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying portsA for ejecting raw gas upward in a reactorand gas exhausting portsfor exhausting exhaust gas after a reaction are provided on an inner bottom of the reactorin which a plurality of silicon seed rodsare stood, the silicon seed rodsare heated and the polycrystalline silicon is deposited from the raw gas on the surfaces. The apparatus includes gas distributing tubesthat are respectively connected to the gas supplying portsA and respectively supply the raw gas to the gas supplying portsA, valvesthat are provided on at least the gas distributing tubes connected to the gas supplying portsA adjacent to a center of the reactorand open or close conduit lines of the gas distributing tubes, and a valve controlling devicethat is connected to the valvesand controls the conduit lines to be closed for a predetermined time at an early stage of the reaction.

Polycrystalline silicon manufacturing apparatus and manufacturing method

A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas.

Polycrystalline silicon manufacturing apparatus

A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.

Method for manufacturing polycrystalline silicon

A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.

Growing community of inventors

Suzuka, Japan

Toshihide Endoh