Core Technology, Inc.

Askagi Corporation

Other

Kern Energy Enterprise Co., Ltd.

Yoshimura, Toshiaki

Toshiaki Yoshimura

Hiroyuki Minowa

Lung Kei Amos Shek

Ying-Shih Hsiao

The present invention improves the in-plane uniformity of film formation via a plasma treatment. It is provided a plasma treatment device constituted so that process gas introduced between an electrode plate and a shower plate is exhausted toward a counter electrode through a plurality of small holes formed in the shower plate, the plasma treatment device comprising a diffuser plate having a plurality of small holes, the diffuser plate being arranged substantially parallel with the shower plate, wherein the process gas is introduced between the electrode plate and the diffuser plate, passes through the plural small holes of the diffuser plate, reaches the shower plate and flows out from the plural small holes of the shower plate toward the electrode plate, and wherein within the small holes formed in the diffuser plate and the small holes formed in the shower plate, the small holes formed in a plate which exists more downstream along a flowing direction of the process gas are made in smaller diameters and an aperture ratio of each plate is made smaller in a plate which exists more upstream along the flowing direction of the process gas.

Plasma treatment device and structure of reaction vessel for plasma treatment

The present invention improves the in-plane uniformity of films formed via a plasma treatment. It is provided a plasma treatment device comprising: an electrode plate arranged in a reaction vessel; a counter electrode arranged parallel so as to opposite to the electrode plate in the reaction vessel; a transmission plate to supply frequency power to the electrode plate from outside of the reaction vessel, the transmission plate being connected from non-opposite side not opposing to the counter electrode of the electrode plate; and an insulator with a container shape, the insulator being arranged in the reaction vessel and storing the electrode plate therein; wherein the non-opposite side of the electrode plate closely contacts to an inner bottom surface of the insulator with the container shape, wherein a side surface of the electrode plate closely contacts to an inner side surface of the insulator with the container shape, and wherein a hole edge portion of the insulator with the container shape is formed so as to protrude toward a counter electrode side.

Provided is a substrate tray which is to be used in a thin-film formation device and makes it easy to improve film quality and film thickness uniformity on a substrate by improving substrate heating efficiency and substrate heating uniformity. Thus, a substrate tray to be used in a thin-film formation device and characterized in that: wherein there are formed substrate mountable spaces each of which substantially corresponds to a substrate shape by installing partition frames arranged in matrix each of which has a substantial quadrangular frame shape within an outer frame and by partitioning inside of the outer frame in a grid, wherein a plurality of wires are installed between front and rear side frames mutually opposing within the outer frame and each partition frame is connected and supported by the wires, and wherein the substrate is mountable on a substrate support portion of a lower partition frame joined to a bottom surface of an upper partition frame in the partition frame or on the wires crossing the substrate mountable spaces.

Substrate tray for use in thin-film formation device

The heat treating furnace for the gas reaction includes an outer body, an inner body, a heating mechanism, gas supplying mechanism, and a controller. Using the controller to control the amount of gas supply effectively keeps the first pressure (P) in the gas circulation chamber outside the inner body greater than the second pressure (P) in the reaction chamber inside the inner body all the time. In this way, the flow rate of gas inlet, reaction rate, cooling rate can be facilitated, and the uniformity of the thin film and the operational safety can be improved.

Growing community of inventors

Iruma, Japan

Toshiaki Yoshimura