Tokyo Shibaura Denki Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Vlsi Technology Research Association

Toshiaki Shinozaki

Ichiro Mori

Toru Tojo

Kazuyoshi Sugihara

Kinya Usuda

Fumiaki Shigemitsu

Takashi Tsuchiya

Yoshihide Kato

Kei Kirita

Makoto Nakase

Mitsuo Tabata

Hirotsugu Wada

Hirokazu Niki

Shunichi Sano

Mamoru Nakasuji

Shinichiro Takasu

Chikara Itoh

Sadao Sasaki

Kunihiro Ikari, Deceased

A pattern forming method, comprising the steps of providing a resist film on a substrate; providing a photosensitive film containing a photosensitive diazonium salt on the resist film; and then subjecting the resultant composite to pattern exposure by use of a light to which both of the resist film and the photosensitive diazonium salt are sensitive, can employ a composition for pattern formation which comprises a photosensitive diazonium salt, a resin binder and a solvent. By this method, a minute pattern of 1 .mu.m or less can be formed, utilizing effectively the UV-ray exposure technique of the prior art, with good dimensional precision and stability.

Pattern forming method utilizing material with photoresist film

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

Method and apparatus for forming resist pattern

A method of inspecting masks which have lithographic patterns thereon, comprises the steps of depositing an electron-emissive layer on the patterned first major surface of the mask, the electron-emissive layer on the clear area of the patterned surface emitting electron beams when irradiated with energy beams, applying energy beams to the patterned surface from behind through the second major surface of the mask, guiding the electron beams emitted from the electron-emissive layer to an electron optical system, thereby forming an electron beam image of the pattern on a detector means, and comparing detection signals corresponding to the pattern and output by the detector means with reference signals representing the design shape and size of the pattern, thereby to inspect the mask.

Method of inspecting masks and apparatus thereof

A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.

An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.

Electron beam pattern transfer system having an autofocusing mechanism

A fixed-slit type photoelectric microscope comprises an irradiation system for irradiating a linear pattern with light beam, an objective for forming an image of the linear pattern, a single slit disposed at a point conjugate to the linear pattern with respect to the objective, a photoelectric conversion element for converting the light beam from the slit into an electrical signal, a rectifying circuit for rectifying an electrical signal from the photoelectric conversion element, and an indicator for visualizing the rectified signal. The irradiation system generates a pair of polarized light beams with planes of polarization orthogonal to each other and alternately illuminates the linear pattern with the pair of polarized light beams at fixed periods. For deflecting the pair of polarized light beams from the linear pattern in different directions, an optical deflecting element is provided between the linear pattern and the slit. Different portions of the slit are illuminated by the pair of polarized light beams deflected by the optical deflecting elements.

Fixed-slit type photoelectric microscope

According to the invention an electron beam pattern transfer device with an improved alignment means is provided. A first and a second mark M.sub.1, M.sub.2 for alignment purposes are formed on the surface of the wafer and the wafer holder, respectively. The first mark M.sub.1 is formed on the wafer by conventional lithographic technique and the second mark M.sub.2 consists of a hole or a heavy metal, such as Ta or Ta.sub.2 O.sub.5. A third alignment mark M.sub.3 is provided on the photocathode mask having a position corresponding to M.sub.2 on the wafer holder and spaced a known distance L.sub.2 from an imaginary reference position M.sub.4 on the mask. The first step of the alignment process requires the detection of a relative distance L.sub.1 between the first and second marks M.sub.1, M.sub.2 by conventional detecting means, such as an optical measuring means. In the next step, the relative position of the photocathode mask and the wafer holder is adjusted so that the distance between the marks M.sub.2 and M.sub.3 is made substantially equal to the difference between the distance L.sub.1 and the known distance L.sub. 2.

Electron beam pattern transfer device and method for aligning mask and

An electron-beam image transfer device includes an evacuated vessel having a main chamber and spare chamber extended therefrom and a specimen holder and mask holder disposed in the main chamber. A subchamber is formed near the spare chamber to house a specimen. The specimen in the subchamber is transferred to the spare chamber by a movable support through an opening which is always kept in an airtight state, and then brought to the specimen holder by a transferring mechanism.

Electron-beam image transfer device

An X-ray system for transferring a fine pattern onto a target has a mask, on the surface of which is formed an X-ray absorbing layer in a predetermined pattern and which is made of a single crystal of high regularity. Parallel monochromic X-rays become incident on the lattice plane of the single crystal at an angle .theta.. Diffraction X-rays emerging from the lattice plane are projected onto the surface of a wafer in the normal direction. An X-ray resist layer is formed on the surface of the wafer. Since incident X-rays and diffraction X-rays are absorbed by the X-ray absorbing layer on the mask, the pattern defined by the layer is projected on the X-ray resist layer.

System for transferring a fine pattern onto a target

An electron beam type pattern transfer apparatus has a photoelectric mask and a sample in a vacuum container made of non-magnetic material. The photoelectric mask is adapted to receive an ultraviolet ray from a light source and emit photoelectrons corresponding to a predetermined transfer pattern and the sample is disposed in parallel with the photoelectric mask with a predetermined distance left therebetween and illuminated with the photoelectrons to form a resist image thereon which corresponds to the transfer pattern. A power source for applying a voltage for accelerating the photoelectrons emitted is connected between the photoelectric mask and the sample. A pair of focusing magnets are disposed around the axis of the vacuum container such that they are located one at one outer side and one in an opposite outer side of the vacuum container to permit a vertical magnetic field to be created between the photoelectric mask and the sample. The focusing magnets have superconductive coils and are driven in a persistent mode.

Electron beam type pattern transfer apparatus

A method of manufacturing an aperture stop with a rectangular aperture for an electron beam exposure device, comprising the steps of: preparing a single-crystal silicon substrate with one side having a (100) face; providing a mask on said side of the substrate; selectively etching the substrate through the mask from said side to form a projecting portion of rectangular cross section by anisotropic etching; forming an aperture layer by covering said one side of the etched substrate with a high-melting-point metal having good electric conductivity, thereby surrounding said projecting portion; and forming in said aperture layer a rectangular aperture with a cross section corresponding to the cross section of said projecting portion by removing said substrate from the aperture layer.

Aperture stop

Disclosed is an electron beam exposure apparatus which comprises a first deflection system for deflecting an electron beam emitted from an electron gun and an objective electron lens for converging the deflected electron beam to apply the beam to a workpiece. Interposed between the objective lens and the workpiece is a second deflection system for deflecting the electron beam in parallel with the optical axis of the apparatus.

Growing community of inventors

Yokohama, Japan

Toshiaki Shinozaki