Hitachi Chemical Company, Ltd.

Showa Denko Materials Co., Ltd.

Toshiaki Akutsu

Tomohiro Iwano

Hisataka Minami

Koji Fujisaki

Masato Fukasawa

Naoyuki Koyama

Kouji Haga

Yasushi Kurata

Toshio Takizawa

Munehiro Oota

Tetsuro Yamashita

Yuuto Ootsuki

Masako Aoki

A polishing liquid comprising a liquid medium, an abrasive grain and a polymer, wherein the polymer includes a first molecular chain having a functional group directly bonded thereto, and a second molecular chain branched from the first molecular chain, and the functional group is at least one selected from the group consisting of a carboxyl group, a carboxylic acid salt group, a hydroxyl group, a sulfo group and a sulfonic acid salt group.

Polishing liquid, polishing liquid set, and substrate polishing method

A polishing agent comprises: a fluid medium; an abrasive grain containing a hydroxide of a tetravalent metal element; a first additive; a second additive; and a third additive, wherein: the first additive is at least one selected from the group consisting of a compound having a polyoxyalkylene chain and a vinyl alcohol polymer; the second additive is a cationic polymer; and the third additive is an amino group-containing sulfonic acid compound.

Abrasive, abrasive set, and method for polishing substrate

The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, polyalkylene glycol, and at least one cationic polymer selected from the group consisting of allylamine polymers, diallylamine polymers, vinylamine polymers and ethyleneimine polymers.

Polishing agent, polishing agent set, and substrate polishing method

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces absorbance of 0.035 or more for light having a wavelength of 400 nm in a liquid phase obtained when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59&#xd7;10G.

Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, and produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %.

The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.

Abrasive, abrasive set, and method for abrading substrate

A polishing liquid for CMP, comprising: an abrasive grain including a cerium-based compound; a 4-pyrone-based compound; a polymer compound having an aromatic ring and a polyoxyalkylene chain; a cationic polymer; and water.

Polishing liquid for CMP, and polishing method

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces a liquid phase having a content of a non-volatile component of 300 ppm or more when centrifuging an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % for 50 minutes at a centrifugal acceleration of 1.59&#xd7;10G.

A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and a difference between a NOconcentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NOconcentration after retaining the aqueous dispersion at 60&#xb0; C. for 72 hours is 200 ppm or less.

The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.

Cmp polishing slurry and method of polishing substrate

A polishing agent according to one embodiment of the present invention contains a liquid medium, an abrasive grain including a hydroxide of a tetravalent metal element, a polymer compound having an aromatic ring and a polyoxyalkylene chain, and a cationic polymer, wherein a weight average molecular weight of the polymer compound is 1000 or more.

Polishing agent, polishing agent set and method for polishing base

A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of a methacrylic acid and the salt thereof and a monomer having an unsaturated double bond, preferably contains furthermore a dispersant or a polymer of monomers containing at least one of an acrylic acid and the salt thereof. The present invention provides a CMP polishing slurry and a polishing method that, after polishing, give a polished film having a smaller difference in residual film thickness due to a pattern density difference.

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Hitachi, Japan

Toshiaki Akutsu